IP Library › Granted Patent US 11,862,443
Granted Patent B2
US 11,862,443 · App. 17/087,333 · Granted Jan 2, 2024

Sputtering target

Inventors: Toshiaki Kuroda (Niihama, JP); Mikio Takigawa (Niihama, JP)
Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
H01J37/3423C23C14/14C23C14/165C23C14/3407C23C14/35H01J37/3405H01J37/3426
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Quick Facts
Patent No.
US 11,862,443
App. No.
17/087,333
Granted
Jan 2, 2024
Kind
B2
Abstract

A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

Claims (19)

1. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein

the target material includes a flat circular first region positioned at a center of the sputtering face, and a flat ring-shaped second region positioned around the first region, wherein

the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face between the first region and the second region, wherein

a diameter of the first region accounts for 32% or more and 58% or less of a diameter of the sputtering face, and

a thickness of the ramp is 0.5 mm to 5 mm, wherein

the thickness of the first region is 10 mm to 30 mm, wherein

the ring width of the second region is 5 mm to 75 mm.

2. A sputtering target comprising a target material, wherein a sputtering face of the target material has a circular shape and a ramp, wherein

the target material includes a flat circular first region positioned at a center of the sputtering face, and a flat ring-shaped second region positioned around the first region, wherein

the ramp has been provided so as to reduce a thickness of the target material, toward inner part of the sputtering face in the radial direction of the sputtering face between the first region and the second region, wherein

a diameter of the first region accounts for 32% or more and less than 50% of a diameter of the sputtering face, and

a thickness of the ramp is 0.5 mm to 5 mm, wherein

the thickness of the first region is 10 mm to 30 mm, wherein

the ring width of the second region is 5 mm to 75 mm.

3. The sputtering target according to any one of claims 1 to 2 , further comprising a backing plate.

4. The sputtering target according to claim 3 , wherein

the thickness of the backing plate is 5 mm to 30 mm.

5. The sputtering target according to claim 3 , wherein

the entire height of the sputtering target is 10 mm to 70 mm.

Priority Claims (2)
JP 2017-064985 · Mar 29, 2017 · national
JP 2017-183878 · Sep 25, 2017 · national
Continuity (2)
Division 15935605 · Mar 26, 2018
Related Publication 20210057196A1 · Feb 25, 2021
Cited By (1)
US 12,217,951