Soldering structure with groove portion and power module comprising the same

1. A soldering structure comprising:

a component to be soldered; and

a metal layer having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed on the outside of the bonding area,

wherein a surface of the component to be soldered is formed by a material with high solder wettability than a surface of the first metal layer and

wherein the groove portion is spaced outward from the component to be soldered.

2. The soldering structure of claim 1 , wherein the groove portion has a plurality of dimples surrounding the bonding area.

3. The soldering structure of claim 2 , wherein a space between each of the plurality of dimples is smaller than a diameter of each of the plurality of dimples.

4. The soldering structure of claim 2 , wherein a space between each of the plurality of dimples is smaller than or equal to half a diameter of each of the plurality of dimples.

5. The soldering structure of claim 1 , wherein the component to be soldered is made of a metal material including copper (Cu), silver (Ag), gold (Au) or nickel (Ni).

6. The soldering structure of claim 1 , wherein the component to be soldered has a surface plated with a metal material including copper (Cu), silver (Ag), gold (Au) or nickel (Ni).

7. The soldering structure of claim 1 , wherein the component to be soldered has one surface facing the bonding area and a side surface perpendicular to the one surface, and the solder extends to the side surface of the component to be soldered.

8. A power module comprising:

a component to be soldered; and

a first substrate including a first metal layer, a dielectric layer and a second metal layer,

wherein the first metal layer incudes an upper surface having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed on the outside of the bonding area,

wherein the dielectric layer is bonded to a lower surface of the first metal layer,

wherein the second metal layer is bonded to a lower surface of the dielectric layer,

wherein a surface of the component to be soldered is formed by a material with higher solder wettability than a surface of the first metal layer and

wherein the groove portion is spaced outward from the component to be soldered.

9. The power module of claim 8 , wherein the groove portion has a plurality of dimples surrounding the bonding area.

10. The power module of claim 9 , wherein a space between each of the plurality of dimples is smaller than a diameter of each of the plurality of dimples.

11. The power module of claim 9 , wherein a space between each of the plurality of dimples is smaller than or equal to half a diameter of each of the plurality of dimples.

12. The power module of claim 8 , wherein the component to be soldered is a spacer electrically connecting the first metal layer and another component to each other.

13. The power module of claim 8 , further including:

a second substrate including a third metal layer, a dielectric layer and a fourth metal layer,

wherein the third metal layer includes an upper surface having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed around the bonding area,

wherein the dielectric layer is bonded to a lower surface of the third metal layer and

wherein the fourth metal layer is bonded to a lower surface of the dielectric layer, and

wherein the component to be soldered is a spacer electrically connecting the first metal layer and the third metal layer to each other.

14. The power module of claim 12 , wherein the spacer includes a metal material of copper (Cu), silver (Ag), gold (Au) or nickel (Ni).

15. The power module of claim 12 , wherein the spacer has a surface plated with a metal material including copper (Cu), silver (Ag), gold (Au) or nickel (Ni).

16. The power module of claim 12 , wherein the spacer has one surface facing the bonding area and a side surface perpendicular to the one surface, and the solder extends to the side surface of the spacer.

17. The power module of claim 8 , wherein a depth of the groove portion is smaller than a thickness of the first metal layer.

18. The power module of claim 13 , wherein a depth of the groove portion is smaller than a thickness of the third metal layer.

19. The power module of claim 8 , wherein a first end portion of the component to be soldered is bonded to a power semiconductor chip by a first solder and a second end portion of the component to be soldered is bonded to the first metal layer of the first substrate by a second solder, and the groove portion is formed only on the first metal layer of the first substrate.