Semiconductor package
There is provided a semiconductor package capable of preventing damage to an interposer to improve reliability. The semiconductor package includes a first substrate including a first insulating layer and first conductive patterns, an interposer disposed on a top surface of the first substrate and including a second insulating layer and second conductive patterns, first connecting members in contact with the top surface of the first substrate and a bottom surface of the interposer, and supporting members including solder parts, which are in contact with the top surface of the first substrate and the bottom surface of the interposer, and core parts, which are disposed in the solder parts and include a different material from the solder parts. The first connecting members electrically connect the first conductive patterns and the second conductive patterns, and the supporting members do not electrically connect the first conductive patterns and the second conductive patterns.
1. A semiconductor package comprising:
a substrate including a first insulating layer, first conductive patterns in the first insulating layer, an upper passivation film, first upper pads, and second upper pads;
an interposer disposed on a top surface of the substrate and including a second insulating layer and second conductive patterns in the second insulating layer;
connecting members in contact with the top surface of the substrate and a bottom surface of the interposer; and
supporting members including solder parts which are in contact with the top surface of the substrate and the bottom surface of the interposer, and core parts which are disposed in the solder parts and include a different material from the solder parts,
wherein the upper passivation film, the first upper pads, and the second upper pads are formed on a top surface of the first insulating layer, the first upper pads in contact with the connecting members, and the second upper pads in contact with the supporting members,
wherein the upper passivation film covers at least parts of the first upper pads and the second upper pads so as to include a top surface that is at a higher vertical level in a direction perpendicular to the top surface of the substrate than top surfaces of the first upper pads and the second upper pads,
wherein the connecting members electrically connect the first conductive patterns and the second conductive patterns, and
wherein the supporting members do not electrically connect the first conductive patterns and the second conductive patterns.
2. The semiconductor package of claim 1 , wherein the upper passivation film covers side surfaces of the first upper pads and the second upper pads.
3. The semiconductor package of claim 1 , wherein parts of the top surfaces of the first upper pads are exposed by first trenches included in the upper passivation film.
4. The semiconductor package of claim 3 , wherein parts of the top surfaces of the second upper pads are exposed by second trenches included in the upper passivation film.
5. The semiconductor package of claim 4 , wherein lower parts of the supporting members are formed in the second trenches.
6. The semiconductor package of claim 3 , wherein lower parts of the connecting members are formed in the first trenches.
7. The semiconductor package of claim 1 , further comprising:
a lower passivation film, first lower pads, and second lower pads,
wherein the lower passivation film, the first lower pads, and the second lower pads are formed on a bottom surface of the second insulating layer.
8. The semiconductor package of claim 7 , wherein the connecting members are connected to the first lower pads respectively and the supporting members are connected to the second lower pads respectively.
9. The semiconductor package of claim 8 , wherein the lower passivation film covers at least parts of the first lower pads and the second lower pads so as to include a bottom surface that is at a lower vertical level in a direction perpendicular to the bottom surface of the interposer than bottom surfaces of the first lower pads and the second lower pads.
10. The semiconductor package of claim 9 , wherein the lower passivation film covers side surfaces of the first lower pads and the second lower pads.
11. A semiconductor package comprising:
a substrate including a first insulating layer and first conductive patterns in the first insulating layer, an upper passivation film, first upper pads, and second upper pads;
an interposer disposed on a top surface of the substrate and including a second insulating layer and second conductive patterns in the second insulating layer;
connecting members contacting the substrate and the interposer, electrically connecting the first conductive patterns and the second conductive patterns;
supporting members including solder parts which are in contact with the top surface of the substrate and a bottom surface of the interposer, and core parts which are disposed in the solder parts and include a different material from the solder parts,
a semiconductor chip mounted on the top surface of the substrate and spaced apart from a bottom surface of the interposer; and
a molding formed to cover a top surface of the semiconductor chip and the bottom surface of the interposer,
wherein the upper passivation film, the first upper pads, and the second upper pads are formed on a top surface of the first insulating layer, the first upper pads in contact with the connecting members respectively, and the second upper pads in contact with the supporting members respectively,
wherein the upper passivation film covers at least parts of the first upper pads and the second upper pads so as to include a top surface that is at a higher vertical level in a direction perpendicular to the top surface of the substrate than top surfaces of the first upper pads and the second upper pads, and
wherein the supporting members do not electrically connect the first conductive patterns and the second conductive patterns.
12. The semiconductor package of claim 11 , wherein parts of the first upper pads are exposed by first trenches included in the upper passivation film.
13. The semiconductor package of claim 12 , wherein lower parts of the connecting members contact side surfaces of the upper passivation film in the first trenches.
14. The semiconductor package of claim 11 , wherein parts of the second upper pads are exposed by second trenches included in the upper passivation film.
15. The semiconductor package of claim 14 , wherein lower parts of the supporting members contact side surfaces of the upper passivation film in the second trenches.
16. The semiconductor package of claim 11 , wherein a distance from the top surface of the substrate to the bottom surface of the interposer is 15 μm to 46 μm.
17. The semiconductor package of claim 11 , wherein the supporting members are closer than the connecting members to the semiconductor chip.
18. The semiconductor package of claim 11 ,
wherein the solder parts have a first melting point, and
wherein the core parts have a second melting point, which is higher than the first melting point.
19. A semiconductor package comprising:
a substrate including a first insulating layer, first conductive patterns in the first insulating layer, an upper passivation film, and first upper pads;
an interposer disposed on a top surface of the substrate and including a second insulating layer, second conductive patterns in the second insulating layer, first lower pads, and a lower passivation film which covers at least parts of the first lower pads; and
supporting members disposed between the substrate and the interposer, including solder parts which are in contact with a top surface of the first upper pads and a bottom surface of the first lower pads, and core parts which are disposed in the solder parts and include a different material from the solder parts,
wherein the upper passivation film and the first upper pads are formed on a top surface of the first insulating layer,
wherein the upper passivation film covers at least parts of the first upper pads so as to include a top surface that is at a higher vertical level in a direction perpendicular to the top surface of the substrate than top surfaces of the first upper pads,
wherein the lower passivation film and the first lower pads are formed on a bottom surface of the second insulating layer,
wherein a distance from the top surface of the substrate to a bottom surface of the interposer is 120 μm to 200 μm,
wherein a height of the core parts is 90 μm to 180 μm, and
wherein the supporting members do not electrically connect the first conductive patterns and the second conductive patterns.
20. The semiconductor package of claim 19 , wherein the lower passivation film includes a bottom surface that is at a lower vertical level in a direction perpendicular to the bottom surface of the interposer than bottom surfaces of the first lower pads.