Bandgap reference circuit and electronic device including the same

1. A bandgap reference circuit comprising:

a reference voltage generating circuit configured to

generate a proportional to absolute temperature (PTAT) voltage and a complementary to absolute temperature (CTAT) voltage, the CTAT voltage having a different temperature characteristic from the PTAT voltage, and

generate a reference voltage at an output node based on the PTAT voltage, the CTAT voltage, and a compensation voltage; and

a compensation circuit configured to

generate a CTAT current based on the CTAT voltage, the CTAT current having a different temperature characteristic from the PTAT voltage, and

determine the compensation voltage based on the CTAT current.

2. The bandgap reference circuit of claim 1 , wherein

the reference voltage generating circuit comprises a first resistor and is configured to determine the PTAT voltage based on the first resistor and a PTAT current, and

the compensation circuit comprises a second resistor and is configured to determine the CTAT current based on the second resistor.

3. The bandgap reference circuit of claim 2 , wherein the compensation circuit further comprises:

a first non-linear compensation circuit comprising the second resistor, and is configured to determine the CTAT current based on the second resistor and the CTAT voltage; and

a second non-linear compensation circuit configured to determine the compensation voltage based on the PTAT current, the CTAT current, and the CTAT voltage.

4. The bandgap reference circuit of claim 3 , wherein

the first non-linear compensation circuit is configured to determine a first portion of the compensation voltage based on the second resistor, and

the second non-linear compensation circuit comprises a third resistor and is configured to determine a second portion of the compensation voltage based on the third resistor.

5. The bandgap reference circuit of claim 4 , wherein

the compensation voltage includes a non-linear function with respect to temperature,

wherein the first portion corresponds to a vertex of the non-linear function, and

wherein the second portion corresponds to a curvature of the non-linear function.

6. The bandgap reference circuit of claim 3 , wherein

the second non-linear compensation circuit is further configured to generate a compensation current based on the PTAT current, the CTAT current, and the CTAT voltage, and

the reference voltage generating circuit is configured to determine the compensation voltage based on the first resistor and the compensation current.

7. The bandgap reference circuit of claim 6 , wherein

the reference voltage generating circuit further comprises a first bipolar transistor and a second bipolar transistor and is configured to determine the PTAT current based on a difference between an emitter-base voltage of the first bipolar transistor and an emitter-base voltage of the second bipolar transistor, and to transfer the PTAT current to the second bipolar transistor to determine the CTAT voltage, and

the second non-linear compensation circuit further comprises a third bipolar transistor and is configured to determine the compensation current based on a difference between the emitter-base voltage of the second bipolar transistor and an emitter-base voltage of the third bipolar transistor.

8. The bandgap reference circuit of claim 3 , wherein the first non-linear compensation circuit is configured to generate the CTAT current by mirroring a current determined based on the second resistor and the CTAT voltage.

9. The bandgap reference circuit of claim 3 , wherein the second non-linear compensation circuit is configured to receive the PTAT current by mirroring a current transferred to the output node.

10. The bandgap reference circuit of claim 2 , wherein at least one of the first resistor or the second resistor is a trimmable resistor.

11. A bandgap reference circuit comprising:

a first operational amplifier comprising a first output terminal, a first input terminal connected to a first node, and a second input terminal connected to a second node;

a first diode-connected transistor connected between the first node and a first power source;

a second diode-connected transistor connected between the second node and the first power source;

a third diode-connected transistor connected between a third node and the first power source;

a first resistor connected between the second node and an output node at which a reference voltage is output;

a second operational amplifier comprising a second output terminal, a third input terminal connected to the second node, and a fourth input terminal connected to a fourth node;

a second resistor connected between the fourth node and the first power source;

a third resistor connected between the third node and the second node;

a fourth resistor connected between the first node and the first diode-connected transistor;

a first current mirror connected to a second power source and the first output terminal and configured to transfer a first current to the output node and the third node; and

a second current mirror connected to the second power source and the second output terminal and configured to transfer a second current to the third node and the fourth node.

12. The bandgap reference circuit of claim 11 , further comprising:

a fifth resistor connected between the first node and a fifth node,

wherein the first current mirror is further configured to transfer the first current to the fifth node.

13. The bandgap reference circuit of claim 11 , further comprising:

a fifth resistor connected between the third node and the first node.

14. The bandgap reference circuit of claim 11 , wherein at least one of the first diode-connected transistor, the second diode-connected transistor, or the third diode-connected transistor is a bipolar transistor.

15. The bandgap reference circuit of claim 14 , wherein an emitter area of the first diode-connected transistor has a different size from an emitter area of the second diode-connected transistor.

16. The bandgap reference circuit of claim 15 , wherein an emitter area of the third diode-connected transistor has a same size as the emitter area of the second diode-connected transistor.

17. The bandgap reference circuit of claim 11 , wherein the first current mirror comprises

a fourth transistor connected between the second power source and the output node, the fourth transistor comprising a control terminal connected to the first output terminal; and

a fifth transistor connected between the second power source and the third node, the fifth transistor comprising a control terminal connected to the first output terminal, and

wherein the second current mirror comprises

a sixth transistor connected between the second power source and the third node, the sixth transistor comprising a control terminal connected to the second output terminal; and

a seventh transistor connected between the second power source and the fourth node, the seventh transistor comprising a control terminal connected to the second output terminal.

18. The bandgap reference circuit of claim 11 , wherein at least one of the first resistor or the second resistor is a trimmable resistor.

19. The bandgap reference circuit of claim 18 , wherein the third resistor is a trimmable resistor.

20. An electronic device comprising:

processing circuitry configured to

generate a proportional to absolute temperature (PTAT) voltage and a complementary to absolute temperature (CTAT) voltage having a different temperature characteristic from the PTAT voltage,

generate a CTAT current based on the CTAT voltage, the CTAT current having a different temperature characteristic from the PTAT voltage,

determine a compensation voltage based on the CTAT current, and

generate a reference voltage based on the PTAT voltage, the CTAT voltage, and the compensation voltage, and

generate a signal based on the reference voltage.