Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)

1. A cross-point spin orbit-torque magnetic random-access memory cell comprising:

a first spin-hall effect write line;

a second spin-hall effect write line non-colinear to the first spin-hall effect write line;

a cross-point free layer comprising a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers, the cross-point free layer configured to store a magnetic bit and located between and in contact with both the first spin-hall effect write line and the second spin-hall effect write line; and

a remote sensing magnetic tunnel junction located in a vicinity of the cross-point free layer,

wherein a free layer sensor of the remote sensing magnetic tunnel junction is in contact with one of the first spin-hall effect write line and the second spin-hall effect write line.

2. The cross-point spin orbit-torque magnetic random-access memory cell of claim 1 , wherein the remote sensing magnetic tunnel junction is located below the first spin-hall effect write line.

3. The cross-point spin orbit-torque magnetic random-access memory cell of claim 1 , wherein the remote sensing magnetic tunnel junction is located above the second spin-hall effect write line.

4. The cross-point spin orbit-torque magnetic random-access memory cell of claim 1 , wherein the remote sensing magnetic tunnel junction comprises:

the free layer sensor located in the vicinity of the cross-point free layer, wherein a magnetization of the free layer sensor is aligned in a same direction as a magnetization of the cross-point free layer;

a reference layer; and

a tunnel-barrier disposed between the free layer and the reference layer.

5. The cross-point spin orbit-torque magnetic random-access memory cell of claim 4 , wherein a first energy barrier of the cross-point free layer is greater than a second energy barrier of the free layer sensor and less than a third energy barrier of the reference layer.

6. The cross-point spin orbit-torque magnetic random-access memory cell of claim 1 , disposed in a two-dimensional memory cell array comprising a plurality of other cross-point spin orbit-torque magnetic random-access memory cells connected by a plurality of first spin-hall effect write lines, including the first spin-hall effect write line, and by a plurality of second spin-hall effect write lines, including the second spin-hall effect write line.

7. The cross-point spin orbit-torque magnetic random-access memory cell of claim 6 , further comprising a three-dimensional memory cell array, including the two-dimensional memory cell array disposed in a stack of a plurality of two-dimensional memory cell arrays, and comprising a plurality of top contacts disposed above cross-point spin orbit-torque magnetic random-access memory cells of an upper two-dimensional memory cell array of the three-dimensional memory cell array.

8. The cross-point spin orbit-torque magnetic random-access memory cell of claim 7 , wherein the second spin-hall effect write line is a bottom spin-hall effect write line disposed on a hardmask of a lower two-dimensional memory cell array of the three-dimensional memory cell array, wherein the hardmask is disposed on a respective remote sensing magnetic tunnel junction of the lower two-dimensional memory cell array.

9. The cross-point spin orbit-torque magnetic random-access memory cell of claim 7 , further comprising a Synthetic Anti-Ferromagnet (SAF) layer disposed below the remote sensing magnetic tunnel-junction, wherein the SAF layer is disposed on a top spin-hall effect write line of a lower two-dimensional memory cell array of the three-dimensional memory cell array.

10. The cross-point spin orbit-torque magnetic random-access memory cell of claim 1 , wherein the dielectric layer isolates the first spin-hall effect write line from the second spin-hall effect write line in a cross-point region, and provides a high coupling layer between the first free layer and the second free layer so that the first free layer and the second free layer switch as a single free layer unit.

11. A method of forming a cross-point spin orbit-torque magnetic random-access memory cell comprising:

forming a bottom spin-hall effect write line;

forming a cross-point free layer on the bottom spin-hall effect write line, wherein forming the cross-point free layer comprises forming a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers;

forming a top spin-hall effect write line on the cross-point free layer, wherein the top spin-hall effect write line is non-colinear to the bottom spin-hall effect write line; and

forming a top remote sensing magnetic tunnel junction on the top spin-hall effect write line.

12. The method of claim 11 , further comprising forming a top contact on the top remote sensing magnetic tunnel-junction.

13. The method of claim 12 , further comprising:

a Synthetic Anti-Ferromagnet (SAF) layer disposed on the top remote sensing magnetic tunnel-junction; and

a hardmask layer disposed on the SAF layer, wherein the top contact is disposed on the hardmask.

14. The method of claim 11 , further comprising a dielectric encapsulation layer separating the bottom spin-hall effect write line from an adjacent bottom spin-hall effect write line of an adjacent cross-point spin orbit-torque magnetic random-access memory cell.

15. The method of claim 11 , wherein the cross-point spin orbit-torque magnetic random-access memory cell is disposed in an upper two-dimensional memory cell array comprising a plurality of other cross-point spin orbit-torque magnetic random-access memory cells, and the bottom spin-hall effect write line is formed over a lower top remote sensing magnetic tunnel junction of a lower cross-point spin orbit-torque magnetic random-access memory cell disposed in a lower two-dimensional memory cell array below the upper two-dimensional memory cell array.

16. A method of forming a cross-point spin orbit-torque magnetic random-access memory cell comprising:

forming a bottom remote sensing magnetic tunnel junction on a substrate;

forming a bottom spin-hall effect write line on the bottom remote sensing magnetic tunnel-junction;

forming a cross-point free layer on the bottom spin-hall effect write line, wherein forming the cross-point free layer comprises forming a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers; and

forming a top spin-hall effect write line on the cross-point free layer, wherein the top spin-hall effect write line is non-colinear to the bottom spin-hall effect write line.

17. The method of claim 16 , further comprising depositing an inter-layer dielectric fill on the top spin-hall effect write line.

18. The method of claim 16 , wherein forming the bottom remote sensing magnetic tunnel junction comprises:

forming a reference layer on the substrate;

forming a tunnel-barrier on the reference layer; and

forming a free layer sensor on the tunnel-barrier and located in a vicinity of the cross-point free layer, wherein a magnetization of the free layer sensor is aligned in a same direction as a magnetization of the cross-point free layer.

19. The method of claim 18 , further comprising:

forming a Synthetic Anti-Ferromagnet (SAF) layer disposed on the substrate between the bottom remote sensing magnetic tunnel junction and the substrate.

20. The method of claim 16 , further comprising a dielectric encapsulation layer separating the bottom spin-hall effect write line from an adjacent bottom spin-hall effect write line of an adjacent cross-point spin orbit-torque magnetic random-access memory cell.