Semiconductor device and production method
Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.
1. A semiconductor device, comprising:
a semiconductor substrate; and
an emitter electrode provided above an upper surface of the semiconductor substrate; wherein
the semiconductor substrate has:
a first conductive type drift region;
a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate;
a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate;
a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and
a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact, wherein the upper surface of the high-concentration plug region is deeper into the semiconductor substrate than the contact region.
2. The semiconductor device according to claim 1 , wherein:
in a depth direction of the semiconductor substrate, a thickness of the high-concentration plug region is less than a thickness of the contact region.
3. The semiconductor device according to claim 2 , wherein:
a lower end of the high-concentration plug region is arranged above a lower end of the base region.
4. The semiconductor device according to claim 3 , wherein:
the semiconductor substrate further has a first conductive type emitter region with a higher doping concentration than the drift region, which is provided between the base region and the upper surface of the semiconductor substrate; and
the contact region is provided in a position deeper than the emitter region.
5. The semiconductor device according to claim 3 , wherein
the semiconductor substrate has:
a plurality of trench portions provided from the upper surface of the semiconductor substrate to the drift region; and
a mesa portion sandwiched between two trench portions of the plurality of trench portions;
the semiconductor device has a transistor portion and a diode portion;
the transistor portion has a boundary portion in contact with the diode portion; and
the trench contact and the high-concentration plug region are provided in the mesa portion of the boundary portion.
6. The semiconductor device according to claim 5 , wherein:
the trench contact and the high-concentration plug region are also provided in the diode portion.
7. The semiconductor device according to claim 2 , wherein:
the semiconductor substrate further has a first conductive type emitter region with a higher doping concentration than the drift region, which is provided between the base region and the upper surface of the semiconductor substrate; and
the contact region is provided in a position deeper than the emitter region.
8. The semiconductor device according to claim 2 , wherein
the semiconductor substrate has:
a plurality of trench portions provided from the upper surface of the semiconductor substrate to the drift region; and
a mesa portion sandwiched between two trench portions of the plurality of trench portions;
the semiconductor device has a transistor portion and a diode portion;
the transistor portion has a boundary portion in contact with the diode portion; and
the trench contact and the high-concentration plug region are provided in the mesa portion of the boundary portion.
9. The semiconductor device according to claim 8 , wherein:
the trench contact and the high-concentration plug region are also provided in the diode portion.
10. The semiconductor device according to claim 1 , wherein:
the semiconductor substrate further has a first conductive type emitter region with a higher doping concentration than the drift region, which is provided between the base region and the upper surface of the semiconductor substrate; and
the contact region is provided in a position deeper than the emitter region.
11. The semiconductor device according to claim 10 , wherein
the semiconductor substrate has:
a plurality of trench portions provided from the upper surface of the semiconductor substrate to the drift region; and
a mesa portion sandwiched between two trench portions of the plurality of trench portions;
the semiconductor device has a transistor portion and a diode portion;
the transistor portion has a boundary portion in contact with the diode portion; and
the trench contact and the high-concentration plug region are provided in the mesa portion of the boundary portion.
12. The semiconductor device according to claim 1 , wherein
the semiconductor substrate has:
a plurality of trench portions provided from the upper surface of the semiconductor substrate to the drift region; and
a mesa portion sandwiched between two trench portions of the plurality of trench portions;
the semiconductor device has a transistor portion and a diode portion;
the transistor portion has a boundary portion in contact with the diode portion; and
the trench contact and the high-concentration plug region are provided in the mesa portion of the boundary portion.
13. The semiconductor device according to claim 12 , wherein
the trench contact and the high-concentration plug region are also provided in the transistor portion other than the boundary portion.
14. The semiconductor device according to claim 13 , wherein:
the trench contact and the high-concentration plug region are also provided in the diode portion.
15. The semiconductor device according to claim 13 , wherein:
the trench portion has:
a conductive portion; and
an interlayer dielectric film provided between the conductive portion and the emitter electrode; wherein
the emitter electrode is in contact with an upper surface of the mesa portion.
16. The semiconductor device according to claim 12 , wherein:
the trench contact and the high-concentration plug region are also provided in the diode portion.
17. The semiconductor device according to claim 16 , wherein:
the trench portion has:
a conductive portion; and
an interlayer dielectric film provided between the conductive portion and the emitter electrode; wherein
the emitter electrode is in contact with an upper surface of the mesa portion.
18. The semiconductor device according to claim 12 , wherein:
the trench portion has:
a conductive portion; and
an interlayer dielectric film provided between the conductive portion and the emitter electrode; wherein
the emitter electrode is in contact with an upper surface of the mesa portion.
19. A production method of a semiconductor device including a semiconductor substrate having a first conductive type drift region, comprising:
forming a second conductive type base region provided between the drift region and an upper surface of the semiconductor substrate, and a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate;
forming a contact trench penetrating the contact region on the upper surface of the semiconductor substrate;
forming a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which in contact with a bottom portion of the contact trench, wherein the upper surface of the high-concentration plug region is deeper into the semiconductor substrate than the contact region; and
providing a conductive material in an interior of the contact trench and forming a trench contact.
20. The production method according to claim 19 , further comprising:
forming a plurality of trench portions provided from the upper surface of the semiconductor substrate to the drift region; and
forming an interlayer dielectric film in an interior of the plurality of trench portions and on an upper surface of the semiconductor substrate, and etching back the interlayer dielectric film on an upper surface of the semiconductor substrate.