Antenna apparatus and fabrication method
A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.
1. A semiconductor device comprising:
a semiconductor die comprising a radio frequency (RF) circuit;
a first dielectric layer disposed over a first surface of the semiconductor die;
an antenna layer disposed over a surface of the first dielectric layer; and
an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein:
the semiconductor die comprises an opening; and
the antenna feeding structure comprises:
a first portion comprising a first via arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die,
a second portion comprising a second via arranged through the first dielectric layer and extending from the first surface of the semiconductor die to the antenna layer, and
a third portion comprising a planar conductive feature disposed on the first surface of the semiconductor die, the third portion conductively connecting the first portion to the second portion.
2. The semiconductor device of claim 1 , wherein:
the first surface of the semiconductor die is a backside of the semiconductor die.
3. The semiconductor device of claim 2 , further comprising:
a redistribution structure over a second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the RF circuit, and the second surface of the semiconductor die is a front side of the semiconductor die; and
a plurality of input/output connectors electrically coupled to the semiconductor die through the redistribution structure.
4. The semiconductor device of claim 3 , wherein:
the redistribution structure comprises a redistribution layer and a second dielectric layer, and wherein the redistribution layer is embedded in the second dielectric layer.
5. The semiconductor device of claim 1 , wherein:
the first via extends partially through the semiconductor die; and
a bottommost end of the first via is connected to a contact embedded in the semiconductor die.
6. The semiconductor device of claim 1 , wherein:
the antenna layer extends over a sidewall of the semiconductor device, and wherein a bottommost level of a portion of the antenna layer extending over the sidewall of the semiconductor device is higher than the first surface of the semiconductor die.
7. The semiconductor device of claim 1 , wherein:
the semiconductor device is an antenna-in-package (AiP) device.
8. A method of using a semiconductor device comprising: a semiconductor die comprising a radio frequency (RF) circuit; a first dielectric layer disposed over a first surface of the semiconductor die; an antenna layer disposed over a surface of the first dielectric layer; and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises an opening, and the antenna feeding structure comprises: a first portion comprising a first via arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, a second portion comprising a second via arranged through the first dielectric layer and extending from the first surface of the semiconductor die to the antenna layer, and a third portion comprising a planar conductive feature disposed on the first surface of the semiconductor die, the third portion conductively connecting the first portion to the second portion, the method comprising:
generating a first RF signal using the RF circuit of the semiconductor die; and
coupling the first RF signal to the antenna layer via the antenna feeding structure.
9. The method of claim 8 , further comprising transmitting the first RF signal via the antenna layer.
10. The method of claim 8 , further comprising:
receiving a second RF signal via the antenna layer; and
coupling the second RF signal to the RF circuit of the semiconductor die via the antenna feeding structure.
11. The method of claim 8 , wherein the first surface of the semiconductor die is a backside of the semiconductor die.
12. The method of claim 11 , wherein the semiconductor device further comprises:
a redistribution structure over a second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the RF circuit, and the second surface of the semiconductor die is a front side of the semiconductor die; and
a plurality of input/output connectors electrically coupled to the semiconductor die through the redistribution structure.
13. The method of claim 12 , wherein:
the redistribution structure comprises a redistribution layer and a second dielectric layer, and wherein the redistribution layer is embedded in the second dielectric layer.
14. The method of claim 8 , wherein:
the first via extends partially through the semiconductor die; and
a bottommost end of the first via is connected to a contact embedded in the semiconductor die.
15. The method of claim 8 , wherein:
the antenna layer extends over a sidewall of the semiconductor device, and wherein a bottommost level of a portion of the antenna layer extending over the sidewall of the semiconductor device is higher than the first surface of the semiconductor die.
16. The method of claim 8 , wherein the semiconductor device is an antenna-in-package (AiP) device.
17. A method of forming a semiconductor device, the method comprising:
providing a semiconductor die comprising a radio frequency (RF) circuit;
forming a first dielectric layer disposed over a first surface of the semiconductor die;
forming an antenna layer disposed over a surface of the first dielectric layer; and
forming an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein:
the semiconductor die comprises an opening; and
the antenna feeding structure comprises:
a first portion comprising a first via arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die,
a second portion comprising a second via arranged through the first dielectric layer and extending from the first surface of the semiconductor die to the antenna layer, and
a third portion comprising a planar conductive layer disposed on the first surface of the semiconductor die, the third portion conductively connecting the first portion to the second portion.
18. The method of claim 17 , wherein the first surface of the semiconductor die is a backside of the semiconductor die.
19. The method of claim 18 , further comprising:
forming a redistribution structure over a second surface of the semiconductor die, wherein the redistribution structure is electrically coupled to the RF circuit, and the second surface of the semiconductor die is a front side of the semiconductor die; and
forming a plurality of input/output connectors electrically coupled to the semiconductor die through the redistribution structure.
20. The method of claim 19 , wherein:
the redistribution structure comprises a redistribution layer and a second dielectric layer, and wherein the redistribution layer is embedded in the second dielectric layer.