Solid-state power amplifiers with cooling capabilities
Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.
1. A processing chamber, comprising:
a power source;
an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and
configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume;
a cooling plate configured to receive a coolant to cool the amplifier during operation, wherein the cooling plate includes a plurality of cooling channels configured to allow the coolant to flow within the cooling plate; and
a controller in communication with the amplifier and configured to control a flow of the coolant through the plurality of cooling channels.
2. The processing chamber of claim 1 , wherein the processing chamber is a degas process chamber.
3. The processing chamber of claim 1 , wherein the amplifier is a solid-state power amplifier (SSPA) that provides power from about 800 W to about 1000 W.
4. The processing chamber of claim 1 , wherein the power source is configured to provide power at a frequency from about 5.0 GHz to about 7.0 GHz.
5. The processing chamber of claim 1 , wherein the amplifier comprises at least one of power dividers or power combiners.
6. The processing chamber of claim 1 , wherein the coolant is chilled water.
7. The processing chamber of claim 1 , wherein the cooling plate is disposed under the amplifier.
8. A method for processing a substrate in a processing chamber, comprising:
amplifying, using an amplifier comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, a power level of an input signal received from a power source;
outputting an amplified signal to a substrate support disposed in a processing volume of the processing volume to heat a substrate;
supplying a coolant to a cooling plate disposed on the amplifier to cool the amplifier during operation, wherein supplying the coolant comprises circulating the coolant through a plurality of cooling channels configured to allow the coolant to flow within the cooling plate; and
controlling flow of the coolant through the plurality of cooling channels using a controller in communication with the amplifier.
9. The method of claim 8 , wherein processing the substrate is performed in a degas process chamber.
10. The method of claim 8 , wherein amplifying the power level of the input signal comprises using a solid-state power amplifier (SSPA) that provides power from about 800 W to about 1000 W.
11. The method of claim 8 , wherein supplying power comprises supplying power at a frequency from about 5.0 GHz to about 7.0 GHz.
12. The method of claim 8 , wherein supplying power comprises using at least one of power dividers or power combiners.
13. The method of claim 8 , wherein circulating the coolant comprises circulating one of a liquid or a gas.
14. The method of claim 8 , wherein the cooling plate is disposed under the amplifier.