Semiconductor storage device and manufacturing method thereof
According to one embodiment, a semiconductor storage device includes a substrate; a stacked body provided above the substrate, wherein the stacked body includes a plurality of first insulating layers and a plurality of conductive layers that are alternately stacked on top of one another along a vertical direction; a plurality of columnar portions that penetrate the stacked body; a first slit, provided in the vertical direction, that divides one or more of the plurality of conductive layers at least at an upper portion of the stacked body; and a second insulating layer that overlays an opening of the first slit, which forms a cavity.
1. A semiconductor storage device, comprising:
a stacked body including a plurality of first insulating layers and a plurality of conductive layers alternately stacked in a first direction, the plurality of conductive layers including at least one first conductive layer functioning as a select gate, a plurality of second conductive layers each functioning as a word line, and at least one third conductive layer provided between the at least one first conductive layer and the plurality of second conductive layers in the first direction and functioning as a dummy word line;
a plurality of columnar portions that penetrate the stacked body, the plurality of columnar portions each including a first columnar portion and a second columnar portion adjacent to the first columnar portion in a second direction crossing the first direction;
a first slit extending in the first direction and a third direction crossing the first direction and the second direction, the first slit dividing the at least one first conductive layer and an upper portion of the at least one first columnar portion, the first slit not dividing the plurality of second conductive layers or the at least one second columnar portion; and
a second insulating layer that overlays an opening of the first slit, which forms a cavity.
2. The semiconductor storage device according to claim 1 , wherein
the cavity is provided at least at a bottom portion of the first slit.
3. The semiconductor storage device according to claim 1 , wherein
a width of a bottom portion of the first slit is narrower than an upper portion of the first slit.
4. The semiconductor storage device according to claim 1 , wherein
the at least one first conductive layer corresponds to a respective one of the plurality of columnar portions.
5. The semiconductor storage device according to claim 1 , wherein
in a cross section perpendicular to the first direction, the first slit includes an intermediate portion having a width narrower than a width of a bottom portion of the first slit.
6. The semiconductor storage device according to claim 5 , wherein
the cavity is located below the intermediate portion in the first slit.
7. The semiconductor storage device according to claim 1 , wherein each of the plurality of columnar portions includes a charge trapping portion.
8. The semiconductor storage device according to claim 1 , wherein the plurality of columnar portions are arranged relative to each other based on a hexagonal shape.
9. The semiconductor storage device according to claim 8 , wherein the first slit extends across some of the plurality of columnar portions that are arranged along the third direction.
10. The semiconductor storage device according to claim 1 , further comprising:
a second slit, provided in the first direction, that penetrates the stacked body.
11. The semiconductor storage device according to claim 10 , wherein the second slit is provided in a plate-shaped portion that extends along the third direction.