Semiconductor device including resistance changing layer and method of manufacturing the same
A semiconductor device includes a substrate and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate. The semiconductor device includes a hole pattern penetrating the gate structure over the substrate, and a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer sequentially disposed on a sidewall surface of the gate structure within the hole pattern. Each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
1. A semiconductor device comprising;
a substrate;
a gate structure disposed over the substrate, the gate structure including at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate;
a hole pattern penetrating the gate structure over the substrate; and
a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer that are sequentially disposed on a sidewall surface of the gate structure within the hole pattern,
wherein each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
2. The semiconductor device of claim 1 , wherein the resistance changing layer includes oxygen vacancies that are movable under an electric field.
3. The semiconductor device of claim 1 , wherein the resistance changing layer has an electrical resistance that changes depending on a distribution of oxygen vacancies inside the resistance changing layer.
4. The semiconductor device of claim 1 , wherein the resistance changing layer includes a non-stoichiometric metal oxide and the metal oxide has an insufficient amount of oxygen to metal.
5. The semiconductor device of claim 4 , wherein the metal oxide includes at least one selected from the group consisting of lithium oxide, titanium oxide, nickel oxide, copper oxide, manganese oxide, hafnium oxide, zirconium oxide, tungsten oxide, niobium oxide, and vanadium oxide.
6. The semiconductor device of claim 5 , wherein the resistance changing layer further includes an impurity that bonds oxygen and the impurity includes silicon (Si) or aluminum (Al).
7. The semiconductor device of claim 1 , wherein the resistor layer has invariable resistivity.
8. The semiconductor device of claim 1 , wherein the resistor layer has a thickness of 1 nm to 5 nm.
9. The semiconductor device of claim 1 , wherein the resistor layer includes silicon oxide or aluminum oxide.
10. The semiconductor device of claim 1 , further comprising:
an insulating layer disposed to contact the resistance changing layer inside the hole pattern; and
a filling layer disposed to contact the insulating layer and to fill the hole pattern.
11. The semiconductor device of claim 10 , wherein the resistance changing layer and the insulating layer include the same metal oxide and the metal oxide of the resistance changing layer has a smaller amount of oxygen than the metal oxide of the insulating layer.
12. The semiconductor device of claim 10 , further comprising a cell insulating structure disposed over the substrate that is connected to the filling layer and that bisects the hole pattern,
wherein the cell insulating structure separates each of the gate structure, the gate insulation layer, the channel layer, the resistor layer, the resistance changing layer, and the insulation layer in a direction that crosses a diameter of the hole pattern.
13. The semiconductor device of claim 1 , wherein ends of the channel layer are configured to be connected to a source line and a bit line, respectively.
14. A semiconductor device comprising;
a substrate;
a gate structure disposed over the substrate, the gate structure including at least one gate electrode layer and at least one interlayer insulating layer that are alternately stacked over the substrate along a first direction perpendicular to the substrate and extending in a second direction perpendicular to the first direction; and
a gate insulating layer, a channel layer, a resistor layer, and a resistance changing layer sequentially disposed on a sidewall surface of the gate structure over the substrate,
wherein each of the resistor layer and the resistance changing layer is disposed opposite to the gate insulating layer, based on the channel layer.
15. The semiconductor device of claim 14 , further comprising an insulating layer disposed on the substrate to contact the resistance changing layer.
16. The semiconductor device of claim 15 , wherein the resistance changing layer and the insulating layer include the same metal oxide, and the metal oxide of the resistance changing layer has a smaller amount of oxygen than the metal oxide of the insulating layer.
17. The semiconductor device of claim 16 , further comprising a plurality of cell insulating structures disposed over the substrate to be spaced apart from each other along the second direction.
18. The semiconductor device of claim 17 , wherein the plurality of cell insulating structures are disposed to extend in a third direction perpendicular to the first and second directions, and the plurality of cell insulating structures separate each of the gate insulating layer, the channel layer, the resistor layer, the channel layer, and the insulating layer.
19. The semiconductor device of claim 14 , wherein the resistance changing layer includes oxygen vacancies movable under an applied electric field.
20. The semiconductor device of claim 14 , wherein the resistance changing layer has an electrical resistance that changes depending on a distribution of oxygen vacancies inside the resistance changing layer, and wherein the resistor layer has fixed resistivity.