IP Library › Granted Patent US 11,875,873
Granted Patent B2
US 11,875,873 · App. 17/483,244 · Granted Jan 16, 2024

Multi-mode compatible ZQ calibration circuit in memory device

Inventors: Hang Song (Wuhan, CN); Daesik Song (Wuhan, CN); Lin Yang (Wuhan, CN)
Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
G11C7/1048G11C16/06G11C2207/2254
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Quick Facts
Patent No.
US 11,875,873
App. No.
17/483,244
Granted
Jan 16, 2024
Kind
B2
Abstract

In certain aspects, a circuit for multi-mode calibration can include a resistor input. The circuit can also include a first comparator connected to the resistor input and to a first plurality of voltage sources. The circuit can also include a first pull-up driver. The circuit can further include a logic pull-up code generator to calibrate the first pull-up driver. The circuit can additionally include a replica of the first pull-up driver. The circuit can also include a first pull-down driver and a second comparator connected to the replica, the first pull-down driver, and a second plurality of voltage sources. The second comparator can compare a voltage of a middle point between the first pull-down driver and the second pull-up driver to one of the second plurality of voltage sources. The circuit can further include a logic pull-down code generator.

Claims (46)

1. A circuit for multi-mode ZQ calibration, comprising:

a first resistor input connected between a first external resistor coupled to a ground voltage and a first group of pull-up drivers;

a second resistor input connected between a second external resistor coupled to a supply voltage and a first group of pull-down drivers;

a first comparator connected to the first resistor input, to the second resistor input, and to a first plurality of selectable voltages, and the first comparator is configured to:

generate a first pull-up signal based on a comparison between a first ZQ pad voltage at the first resistor input and a first one of the first plurality of selectable voltages; and

generate a first pull-down signal based on a comparison between a second ZQ pad voltage at the second resistor input and a second one of the plurality of selectable voltages;

a second comparator connected to a middle point between a second group of pull-down drivers and a second group of pull-up drivers, and configured to generate a second pull-up signal or a second pull-down signal based on a comparison between a voltage at the middle point and a third one of the plurality of selectable voltages;

a logic pull-up code generator configured to:

generate a first pull-up code based on the first pull-up signal to calibrate the first group of pull-up drivers, and

generate a second pull-up code based on the second pull-up signal to calibrate the second group of pull-up drivers; and

a logic pull-down code generator configured to:

generate a first pull-down code based on the first pull-down signal to calibrate the first group of pull-down drivers, and

generate a second pull-down code based on the second pull-down signal to calibrate the second group of pull-down drivers.

2. The circuit of claim 1 , wherein the circuit is configured to calibrate according to at least two modes.

3. The circuit of claim 2 , wherein a first mode of the at least two modes is a DDR3 mode and a second mode of the at least two modes is an LPDDR4 mode.

4. The circuit of claim 3 , wherein the second mode is calibrated for a Voh target of Vccq/3 or Vccq/2.5.

5. The circuit of claim 1 , wherein the circuit is in connection with an interface of a NAND Flash memory.

6. The circuit of claim 1 , wherein the circuit is in connection with a data bus of a NAND Flash memory.

7. A circuit for multi-mode ZQ calibration, comprising:

a first group of pull-up drivers connected to a first external resistor that is coupled to a ground voltage at a first resistor input;

a first group of pull-down drivers connected to a second external resistor that is coupled to a supply voltage at a second resistor input;

a first comparator connected to the first resistor input, the second resistor input, and to a plurality of selectable voltages;

a second group of pull-up drivers connected to a second group of pull-down drivers, respectively, at a plurality of middle points;

a second comparator connected to the plurality of middle points and to the plurality of selectable voltages;

a logic pull-up code generator connected to the first comparator and the second comparator and configured to generate pull-up codes to calibrate the first group of pull-up drivers and the second group of pull-up drivers; and

a logic pull-up code generator connected to the first comparator and the second comparator and configured to generate pull-down codes to calibrate the first group of pull-down drivers and the second group of pull-down drivers.

8. The circuit of claim 7 , wherein the circuit is configured to calibrate according to at least two modes.

9. The circuit of claim 8 , wherein a first mode of the at least two modes is a DDR3 mode and a second mode of the at least two modes is an LPDDR4 mode.

10. The circuit of claim 9 , wherein the second mode is calibrated for a Voh target of Vccq/3 or Vccq/2.5.

11. The circuit of claim 7 , wherein the circuit is in connection with an interface of a NAND Flash memory.

12. The circuit of claim 7 , wherein the circuit is in connection with a data bus of a NAND Flash memory.

13. A circuit for multi-mode ZQ calibration, comprising:

a first group of pull-up drivers connected to a first external resistor that is coupled to a ground voltage at a first resistor input;

a first group of pull-down drivers connected to a second external resistor that is coupled to a supply voltage at a second resistor input;

a first comparator configured to:

compare a first one of a plurality of selectable voltages with a first ZQ pad voltage at the first resistor input to generate a first comparison output, and

compare a second one of the plurality of selectable voltages with a second ZQ pad voltage at the second resistor input to generate a second comparison output;

a logic pull-up code generator configured to generate a pull-up code to calibrate the first group of pull-up drivers based on the first comparison output; and

a logic pull-down code generator configured to generate a pull-down code to calibrate the first group of pull-down drivers based on the second comparison output.

14. The circuit of claim 13 , further comprising a second comparator, wherein the second comparator is connected to a middle point between a second group of pull-down drivers and a second group of pull-up drivers.

15. The circuit of claim 14 , wherein the second comparator is configured to generate a second pull-up signal or a second pull-down signal based on a comparison between a voltage at the middle point and a third one of the plurality of selectable voltages.

16. The circuit of claim 13 , wherein the circuit is configured to calibrate according to at least two modes.

17. The circuit of claim 14 , wherein a first mode of the at least two modes is a DDR3 mode and a second mode of the at least two modes is an LPDDR4 mode.

18. The circuit of claim 15 , wherein the second mode is calibrated for a Voh target of Vccq/3 or Vccq/2.5.

19. The circuit of claim 13 , wherein the circuit is in connection with an interface of a NAND Flash memory.

20. The circuit of claim 13 , wherein the circuit is in connection with a data bus of a NAND Flash memory.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2021
From: SONG, HANG; SONG, DAESIK; YANG, LIN
To: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Reel/Frame 057590/0615 →
Continuity (2)
Continuation PCTCN2021082661 · Mar 24, 2021
Related Publication 20220310137A1 · Sep 29, 2022