Terahertz light source device

1. A terahertz light source device comprising:

an antenna;

a plurality of wire electrodes configured to connect the antenna to a power source;

a capacitor connected to the wire electrodes between the antenna and the power source; and

a plurality of resonance tunneling diodes connected to the wire electrodes between the capacitor and the antenna, and configured to generate a terahertz wave by coupling with the capacitor as a parallel resonance circuit with respect to the power source,

wherein the resonance tunneling diodes comprise:

a first resonance tunneling diode having a reference distance from the capacitor;

a second resonance tunneling diode provided on one side of the first resonance tunneling diode opposite to the capacitor, the second resonance tunneling diode having a first separation distance from the first resonance tunneling diode, the first separation distance being equal to the reference distance; and

a third resonance tunneling diode provided on one side of the second resonance tunneling diode opposite to the first resonance tunneling diode, the third resonance tunneling diode having a second separation distance from the second resonance tunneling diode, and

wherein the second separation distance is equal to the first separation distance to resonate the terahertz wave using a constructive interference.

2. The terahertz light source device of claim 1 , wherein the resonance tunneling diodes further comprise:

a fourth resonance tunneling diode provided on one side of the third resonance tunneling diode opposite to the second resonance tunneling diode, the fourth resonance tunneling diode having a third separation distance from the third resonance tunneling diode, the third separation distance being equal to the second separation distance; and

a fifth resonance tunneling diode provided on one side of the fourth resonance tunneling diode opposite to the third resonance tunneling diode, the fifth resonance tunneling diode having a fourth separation distance from the fourth resonance tunneling diode, and

wherein the fourth separation distance is equal to the third separation distance.

3. The terahertz light source device of claim 1 , further comprising a resistance element connected to the wire electrodes between the resonance tunneling diodes.

4. The terahertz light source device of claim 1 , wherein each of the reference distance and the first through fourth separation distances is 70 μm.

5. The terahertz light source device of claim 1 , wherein each of the resonance tunneling diodes comprises:

a substrate;

a first doped layer disposed on the substrate;

a first barrier layer disposed on one side of the first doped layer;

a well layer disposed on the first barrier layer;

a second barrier layer disposed on the well layer; and

a second doped layer disposed on the second barrier layer.

6. The terahertz light source device of claim 5 , wherein the wire electrodes comprise:

a first wire electrode disposed on another side of the first doped layer; and

a second wire electrode disposed on the second doped layer,

wherein the first and second wire electrodes have a characteristic impedance of 90Ω.

7. The terahertz light source device of claim 5 , wherein one side of the first doped layer, the first barrier layer, the well layer, the second barrier layer, and the second doped layer form a mesa structure.

8. The terahertz light source device of claim 7 , wherein the mesa structure has a square shape, and

wherein one side of the square shape has a length of 0.77 μm.

9. The terahertz light source device of claim 5 , wherein each of the first and second barrier layers has a thickness of 2 nm or less.

10. The terahertz light source device of claim 5 , wherein each of the first and second barrier layers comprises aluminum gallium nitride.

11. The terahertz light source device of claim 5 , wherein the well layer has a thickness of 3 nm to 4 nm.