Acoustic wave filter device and multiplexer using same
An acoustic wave filter device includes first and second terminals, a longitudinally coupled resonator coupled between the first terminal and the second terminal, and an inductor connected between a path and a ground potential, the path connecting the first terminal and the longitudinally coupled resonator to each other. The longitudinally coupled resonator includes at least one first IDT electrode coupled to the first terminal, and at least one second IDT electrode connected to the second terminal. A total capacitance value of the at least one first IDT electrode is smaller than a total capacitance value of the at least one second IDT electrode.
1. An acoustic wave filter device comprising:
a first terminal;
a second terminal;
a longitudinally coupled resonator coupled between the first terminal and the second terminal; and
an inductor connected between a path and a ground potential, the path connecting the first terminal and the longitudinally coupled resonator to each other; wherein
the longitudinally coupled resonator includes:
at least one first IDT electrode coupled to the first terminal; and
at least one second IDT electrode connected to the second terminal; and
a total capacitance value of the at least one first IDT electrode is smaller than a total capacitance value of the at least one second IDT electrode.
2. An acoustic wave filter device comprising:
a first terminal;
a second terminal;
a longitudinally coupled resonator coupled between the first terminal and the second terminal; and
an inductor connected between a path and a ground potential, the path connecting the first terminal and the longitudinally coupled resonator to each other; wherein
the longitudinally coupled resonator includes:
at least one first IDT electrode coupled to the first terminal; and
at least one second IDT electrode connected to the second terminal;
a total area of an intersecting region of electrode fingers of the at least one first IDT electrode is smaller than a total area of an intersecting region of electrode fingers of the at least one second IDT electrode;
each IDT electrode of the at least one first IDT electrode includes a first region in which electrode fingers are provided with a first pitch therebetween and a second region in which electrode fingers are provided with a second pitch therebetween, which is shorter than the first pitch;
each IDT electrode of the at least one second IDT electrode includes a third region in which electrode fingers are provided with a third pitch therebetween and a fourth region in which electrode fingers are provided with a fourth pitch therebetween, which is shorter than the third pitch;
the second region faces the fourth region; and
a number of electrode fingers adjacent to each other with the second pitch therebetween in the second region is smaller than a number of electrode fingers adjacent to each other with the fourth pitch therebetween in the fourth region.
3. The acoustic wave filter device according to claim 1 , wherein a total number of electrode fingers of the at least one first IDT electrode is smaller than a total number of electrode fingers of the at least one second IDT electrode.
4. The acoustic wave filter device according to claim 1 , wherein the at least one first IDT electrode includes a number of electrode fingers that is smaller than a number of electrode fingers of each of the at least one second IDT electrode.
5. The acoustic wave filter device according to claim 1 , wherein a number of electrode fingers of each IDT electrode included in the at least one first IDT electrode is smaller than a number of electrode fingers of each IDT electrode included in the at least one second IDT electrode.
6. The acoustic wave filter device according to claim 1 , wherein an electrode-finger-to-electrode-finger distance of the at least one first IDT electrode is longer than an electrode-finger-to-electrode-finger distance of each of the at least one second IDT electrode.
7. The acoustic wave filter device according to claim 1 , wherein
each IDT electrode of the at least one first IDT electrode includes a first region in which electrode fingers are provided with a first pitch therebetween and a second region in which electrode fingers are provided with a second pitch therebetween, which is shorter than the first pitch;
each IDT electrode of the at least one second IDT electrode includes a third region in which electrode fingers are provided with a third pitch therebetween and a fourth region in which electrode fingers are provided with a fourth pitch therebetween, which is shorter than the third pitch;
the second region faces the fourth region; and
a number of electrode fingers adjacent to each other with the second pitch therebetween in the second region is smaller than a number of electrode fingers adjacent to each other with the fourth pitch therebetween in the fourth region.
8. The acoustic wave filter device according to claim 1 , wherein the longitudinally coupled resonator is a surface acoustic wave resonator.
9. The acoustic wave filter device according to claim 1 , further comprising an acoustic wave resonator connected between the first terminal and the longitudinally coupled resonator.
10. A multiplexer comprising:
the acoustic wave filter device according to claim 1 .
11. The multiplexer according to claim 10 , further comprising:
a third terminal; and
another filter device provided between the first terminal and the third terminal.
12. The acoustic wave filter device according to claim 2 , wherein a total number of electrode fingers of the at least one first IDT electrode is smaller than a total number of electrode fingers of the at least one second IDT electrode.
13. The acoustic wave filter device according to claim 2 , wherein the at least one first IDT electrode includes a number of electrode fingers that is smaller than a number of electrode fingers of each of the at least one second IDT electrode.
14. The acoustic wave filter device according to claim 2 , wherein a number of electrode fingers of each IDT electrode included in the at least one first IDT electrode is smaller than a number of electrode fingers of each IDT electrode included in the at least one second IDT electrode.
15. The acoustic wave filter device according to claim 2 , wherein an electrode-finger-to-electrode-finger distance of the at least one first IDT electrode is longer than an electrode-finger-to-electrode-finger distance of each of the at least one second IDT electrode.
16. The acoustic wave filter device according to claim 2 , wherein the longitudinally coupled resonator is a surface acoustic wave resonator.
17. The acoustic wave filter device according to claim 2 , further comprising an acoustic wave resonator connected between the first terminal and the longitudinally coupled resonator.
18. A multiplexer comprising:
the acoustic wave filter device according to claim 2 .
19. The multiplexer according to claim 18 , further comprising:
a third terminal; and
another filter device provided between the first terminal and the third terminal.