IP Library › Granted Patent US 11,878,905
Granted Patent B2
US 11,878,905 · App. 16/937,552 · Granted Jan 23, 2024

Micro-electromechanical system device and method of forming the same

Inventor: Jia Jie Xia (Singapore, SG)
Assignee: Vanguard International Semiconductor Corporation
B81B3/0021G01P15/08B81C2203/03G01P2015/0817
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Quick Facts
Patent No.
US 11,878,905
App. No.
16/937,552
Granted
Jan 23, 2024
Kind
B2
Abstract

The present disclosure related to a micro-electromechanical system (MEMS) device and a method of forming the same. The MEMS device includes a substrate, a cavity, an interconnection structure and a proof mass. The substrate includes a first surface and a second surface opposite to the first surface. The cavity is disposed in the substrate to extend between the first surface and the second surface. The interconnection structure is disposed on the first surface of the substrate, over the cavity. The proof mass is disposed on the interconnection structure, wherein the proof mass is partially suspended over the interconnection structure.

Claims (14)

1. A micro-electromechanical system device comprising:

a substrate, comprising a first surface and a second surface opposite to the first surface;

a cavity disposed in the substrate, extending between the first surface and the second surface;

an interconnection structure disposed on the first surface of the substrate, over the cavity, the interconnection structure comprising a suspended region corresponding to the cavity and a penetrating hole in the suspended region, wherein a first end of the suspended region is closed to the penetrating hole and is not connected to the substrate; and

a proof mass disposed on the interconnection structure, wherein the proof mass is partially suspended over the interconnection structure, the proof mass further comprises a base layer and a mass layer, and the base layer comprises a dielectric material, wherein at least one end of the proof mass is suspended over the interconnection structure.

2. The micro-electromechanical system device accordingly to claim 1 , wherein the base layer is directly disposed on the interconnection structure, and the mass layer is disposed on the base layer.

3. The micro-electromechanical system device accordingly to claim 1 , wherein one end of the mass layer is disposed on the base layer, and another end of the mass layer is suspended over the interconnection structure.

4. The micro-electromechanical system device accordingly to claim 1 , wherein the mass layer further comprises a protrusion surrounding a sidewall of the base layer.

5. The micro-electromechanical system device accordingly to claim 4 , wherein the protrusion directly contacts the interconnection structure.

6. The micro-electromechanical system device accordingly to claim 2 , wherein a second end of the suspended region is connected to the substrate.

7. The micro-electromechanical system device accordingly to claim 6 , wherein the base layer is disposed adjacent to the first end of the suspended region.

8. The micro-electromechanical system device accordingly to claim 6 , wherein the mass layer is extended from the first end of the suspended region to the second end of the suspended region.

9. The micro-electromechanical system device accordingly to claim 1 , further comprising an oxide layer disposed between the interconnection structure and the substrate.

10. The micro-electromechanical system device accordingly to claim 1 , wherein the cavity has a thickness the same as a thickness of the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2020
From: XIA, JIA JIE
To: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
Reel/Frame 053299/0021 →
Continuity (1)
Related Publication 20220024753A1 · Jan 27, 2022