Memory system and peak power management for memory dies of the memory system
A method of peak power management (PPM) is provided for two NAND memory dies. each NAND memory die comprises a PPM circuit having a PPM contact pad held at an electric potential common between the two NAND memory dies. The method includes the following steps: detecting the electric potential during a first peak power check (PPC) routine for the first NAND memory die; driving the electric potential to a second voltage level if the detected electric potential is at a first voltage level higher than the second voltage level; generating a pausing signal in the electric potential to pause a second PPC routine for the second NAND memory die if no pausing signal is detected; and generating a resuming signal in the electric potential to resume the second PPC routine for the second NAND memory die after the first NAND memory die completes a first peak power operation.
1. A method of peak power management (PPM) for multiple memory dies comprising a first memory die and a second memory die, wherein the first memory die comprises a first PPM circuit having a single first PPM contact pad, and the second memory die comprises a second PPM circuit having a single second PPM contact pad electrically connected with the single first PPM contact pad such that the single first PPM contact pad and the single second PPM contact pad share an electric potential, the method comprising:
starting a first peak power check (PPC) routine of the first memory die when the electric potential shared between the single first PPM contact pad and the single second PPM contact pad is at a first voltage level;
driving the electric potential shared between the single first PPM contact pad and the single second PPM contact pad to a second voltage level lower than the first voltage level at a first timing after starting the first PPC routine;
enabling the first memory die to wait for a first delay time period;
generating a pausing signal in the electric potential shared between the single first PPM contact pad and the single second PPM contact pad at a second timing after the first timing;
performing a first peak power operation of the first memory die; and
generating a resuming signal in the electric potential shared between the single first PPM contact pad and the single second PPM contact pad at a fifth timing after the first memory die has completed the first peak power operation.
2. The method according to claim 1 , wherein the first delay time period is unique for each of the multiple memory dies.
3. The method according to claim 1 , wherein the generating of the pausing signal comprises generating a voltage pulse in the electric potential.
4. The method according to claim 3 , wherein the voltage pulse comprises a pulse width in a range between 0.1 μs and 10 μs.
5. The method according to claim 3 , wherein the voltage pulse is a positive voltage pulse.
6. The method according to claim 1 , wherein the generating of the resuming signal comprises driving the electric potential to the first voltage level, wherein the resuming signal comprises a rising edge of the electric potential.
7. The method according to claim 1 , further comprising:
starting a second PPC routine of the second memory die at a third timing after the first timing and before the second timing;
pausing the second PPC routine when detecting the electric potential is at the second voltage level; and
resuming the second PPC routine at the fifth timing according to the resuming signal.
8. The method according to claim 7 , further comprising:
starting a third PPC routine of a third memory die after the first timing and before the second timing;
pausing the third PPC routine when detecting the electric potential is at the second voltage level; and
resuming the third PPC routine simultaneously with the second PPC routine at the fifth timing according to the resuming signal.
9. The method according to claim 1 , further comprising:
starting a second PPC routine of the second memory die simultaneously with the first PPC routine;
enabling the second memory die to wait for a second delay time period, wherein the second delay time period is longer than the first delay time period;
pausing the second PPC routine at the second timing according to the pausing signal; and
resuming the second PPC routine at the fifth timing according to the resuming signal.
10. The method according to claim 9 , further comprising:
after resuming the second PPC routine, driving the electric potential to the second voltage level at a sixth timing;
enabling the second memory die to wait for a fourth delay time period;
generating the pausing signal in the electric potential at a fourth timing after the sixth timing;
performing a second peak power operation of the second memory die; and
generating the resuming signal in the electric potential after the second memory die has completed the second peak power operation.
11. The method according to claim 9 , further comprising:
starting a third PPC routine of a third memory die simultaneously with the first PPC routine and the second PPC routine;
enabling the third memory die to wait for a third delay time period, wherein the third delay time period is longer than the first delay time period;
pausing the third PPC routine at the second timing according to the pausing signal; and
resuming the third PPC routine simultaneously with the second PPC routine at the fifth timing according to the resuming signal.
12. The method according to claim 1 , further comprising:
starting a second PPC routine of the second memory die after the second timing and before the fifth timing;
pausing the second PPC routine when detecting the electric potential is at the second voltage level; and
resuming the second PPC routine at the fifth timing according to the resuming signal.