Image sensor and image sensing circuit

1. An image sensor comprising:

a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident;

a photoelectric conversion layer in the substrate;

an isolation film disposed on the substrate, along the photoelectric conversion layer;

a storage conductive pattern disposed in the isolation film;

a transfer gate disposed on a first surface of the substrate;

a storage diode disposed between the photoelectric conversion layer and the storage conductive pattern in a first direction parallel to the first surface;

a first impurity-injected area disposed between the storage diode and the first surface in a second direction perpendicular to the first direction; and

a second impurity-injected area disposed on the first surface of the substrate and directly connected to the transfer gate, wherein

the first and second impurity-injected areas are electrically connected.

2. The image sensor of claim 1 , further comprising an impurity-injected barrier area disposed in the substrate between the photoelectric conversion layer and the storage conductive pattern in the first direction.

3. The image sensor of claim 2 , wherein an impurity type of the photoelectric conversion layer and the first impurity-injected area differs from an impurity type of the impurity-injected barrier area.

4. The image sensor of claim 1 , wherein the isolation film and the storage conductive pattern extend from the first surface to the second surface and thereby penetrate the substrate.

5. The image sensor of claim 1 , wherein a voltage is applied to the storage conductive pattern.

6. The image sensor of claim 1 , further comprising:

a separation pattern disposed in the substrate between the photoelectric conversion layer and the first impurity-injected area, wherein

the separation pattern extends from the first surface and is exposed at the first surface, but not at the second surface.

7. The image sensor of claim 6 , wherein the separation pattern is not disposed between part of the photoelectric conversion layer adjacent to the second surface and part of the first impurity-injected area adjacent to the second surface.

8. The image sensor of claim 1 , further comprising:

a separation pattern disposed in the substrate between the photoelectric conversion layer and the first impurity-injected area, wherein

the separation pattern extends from the second surface and is exposed at the second surface, but not at the first surface.

9. The image sensor of claim 8 , wherein the separation pattern is not disposed between part of the photoelectric conversion layer adjacent to the first surface and part of the first impurity-injected area adjacent to the first surface.

10. The image sensor of claim 1 , wherein the isolation film is disposed to surround part of the first impurity-injected area and is spaced apart from the photoelectric conversion layer.

11. The image sensor of claim 10 , wherein the isolation film extends from the first surface to the second surface and thereby penetrates the substrate.

12. An image sensing circuit comprising:

a pixel generating an image signal; and

a read-out circuit connected to the pixel, wherein:

the pixel includes:

a photoelectric conversion layer configured to convert incident light into first and second electric charges that are different from each other, and

a capacitor configured to receive the second electric charge from the photoelectric conversion layer and store the second electric charge, and the read-out circuit includes:

a transfer transistor which is disposed adjacent to the photoelectric conversion layer and configured to receive the first electric charge from the photoelectric conversion layer,

a floating diffusion which is connected to the transfer transistor and the capacitor and configured to receive the first and second electric charges,

the first electric charge passes through the transfer transistor as it flows from the photoelectric conversion layer to the floating diffusion and the second electric charge does not pass through the transfer transistor as it flows from the photoelectric conversion layer to the floating diffusion.

13. The image sensing circuit of claim 12 , wherein the read-out circuit includes an auxiliary capacitor which is connected to the floating diffusion and configured to store the first electric charge received from the transfer transistor.

14. The image sensing circuit of claim 12 , wherein the pixel stores the second electric charge by applying a voltage to the capacitor or transmits the second electric charge to the read-out circuit.

15. The image sensing circuit of claim 12 , wherein the second electric charge includes electric charge overflow from the photoelectric conversion layer.

16. An image sensor comprising:

a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident;

a photoelectric conversion layer in the substrate;

a capacitor in the substrate, the capacitor extending in a first direction, which is perpendicular to the first surface, along the photoelectric conversion layer;

a transfer gate disposed on the first surface of the substrate;

a first impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate; and

a connecting structure disposed on the first surface of the substrate, wherein:

the capacitor and the first impurity-injected area are connected by the connecting structure, and

an electric charge received by the capacitor from the photoelectric conversion layer is transferred by the capacitor to the first impurity-injected area without passing through the transfer gate.

17. The image sensor of claim 16 , wherein the capacitor is spaced apart from the photoelectric conversion layer in a second direction, which is perpendicular to the first direction, and extends in a third direction, which intersects the first and second directions.

18. The image sensor of claim 16 , wherein part of the capacitor is exposed at the first and second surfaces of the substrate.

19. The image sensor of claim 16 , further comprising:

an impurity-injected barrier area disposed in the substrate between the photoelectric conversion layer and the capacitor in a second direction that is perpendicular to the first direction, wherein

an impurity type of the photoelectric conversion layer differs from an impurity type of the impurity-injected barrier area.

20. The image sensor of claim 19 , wherein the impurity-injected barrier area extends in the first direction along the photoelectric conversion layer.