Semiconductor packages

1. A semiconductor package comprising:

a first semiconductor chip;

a second semiconductor chip;

first main connection pad structures arranged at an interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a first main pitch in a first direction parallel to a top surface of the first semiconductor chip, wherein each of the first main connection pad structures comprises a first connection pad electrically connected to the first semiconductor chip, and a second connection pad electrically connected to the second semiconductor chip and contacting the first connection pad;

first dummy connection pad structures arranged at the interface between the first semiconductor chip and the second semiconductor chip, arranged to be apart from the first main connection pad structures, and arranged to be apart from each other by a first dummy pitch in the first direction, the first dummy pitch being greater than the first main pitch;

second dummy connection pad structures arranged at the interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a second dummy pitch in the first direction; and

third dummy connection pad structures arranged at the interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a third dummy pitch in the first direction,

wherein the second dummy pitch is greater than the first dummy pitch, and the third dummy pitch is greater than the second dummy pitch.

2. The semiconductor package of claim 1 , further comprising:

a first bonding insulating layer arranged on the first semiconductor chip and arranged to have a surface coplanar with a surface of each first connection pad at the interface between the first semiconductor chip and the second semiconductor chip; and

a second bonding insulating layer arranged on the second semiconductor chip, arranged to have a surface coplanar with a surface of each second connection pad at the interface between the first semiconductor chip and the second semiconductor chip, and contacting the first bonding insulating layer.

3. The semiconductor package of claim 1 , further comprising a molding material surrounding side surfaces of the first semiconductor chip and side surfaces of the second semiconductor chip,

wherein, when viewed from the top of the first semiconductor chip, the first dummy connection pad structures surround the first main connection pad structures.

4. The semiconductor package of claim 1 , wherein the first main connection pad structures, the first dummy connection pad structures, the second dummy connection pad structures, and the third dummy connection pad structures are arranged in order in the first direction from a center region of the semiconductor package toward an edge of the semiconductor package such that the first main connection pad structures are at the center region of the semiconductor package, and the third dummy connection pad structures are closest to the edge of the semiconductor package among the first main connection pad structures, the first dummy connection pad structures, the second dummy connection pad structures, and the third dummy connection pad structures.

5. The semiconductor package of claim 1 , wherein the first main connection pad structures have a first main pad density when viewed from the top of the first semiconductor chip, the first dummy connection pad structures have a first dummy pad density when viewed from the top of the first semiconductor chip, the second dummy connection pad structures have a second dummy pad density when viewed from the top of the first semiconductor chip, and the third dummy connection pad structures have a third dummy pad density when viewed from the top of the first semiconductor chip, and

wherein the first dummy pad density is less than the first main pad density, the second dummy pad density is less than the first dummy pad density, and the third dummy pad density is less than the second dummy pad density.

6. The semiconductor package of claim 1 , wherein:

the first main connection pad structures are arranged in a first main pad region, the first main connection pad structures have a first main pad density when viewed from the top of the first semiconductor chip,

the first dummy connection pad structures are arranged in a first dummy pad region, and

the first dummy pad region comprises n sub-dummy pad regions, and n is determined by Equation 1,

( D _ MP 1)/( DCR )−1≤ n <( D _ MP 1)/( DCR ):  Equation 1,

wherein n is a natural number, DCR is a reference pad density, and

a k-th sub-dummy pad region has a sub-dummy pad density according to Equation 2,

D _ DPk =( n+ 1− k )/( n+ 1)* D _ MP 1:  Equation 2,

wherein D_DPk is a density of the k-th sub-dummy pad region, k is a natural number from 1 to n, and D_MP 1 is the first main pad density.

7. A semiconductor package, comprising:

a first semiconductor chip;

a second semiconductor chip;

first main connection pad structures arranged at an interface between the first semiconductor chip and the second semiconductor chip and arranged to be apart from each other by a first main pitch in a first direction parallel to a top surface of the first semiconductor chip, wherein each of the first main connection pad structures comprises a first connection pad electrically connected to the first semiconductor chip, and a second connection pad electrically connected to the second semiconductor chip and contacting the first connection pad;

first dummy connection pad structures arranged at the interface between the first semiconductor chip and the second semiconductor chip, arranged to be apart from the first main connection pad structures, and arranged to be apart from each other by a first dummy pitch in the first direction, the first dummy pitch being greater than the first main pitch; and

second main connection pad structures arranged at the interface between the first semiconductor chip and the second semiconductor chip, arranged to be apart from the first main connection pad structures and the first dummy connection pad structures, and arranged to be apart from each other by a second main pitch in the first direction, the second main pitch being greater than the first main pitch.

8. The semiconductor package of claim 7 , wherein:

the first main connection pad structures are arranged in a first main pad region, the first main connection pad structures have a first main pad density when viewed from the top of the first semiconductor chip, the second main connection pad structures are arranged in a second main pad region, the second main connection pad structures have a second main pad density when viewed from the top of the first semiconductor chip, the first dummy connection pad structures are arranged in a first dummy pad region, and the first dummy connection pad structures have a first dummy pad density when viewed from the top of the first semiconductor chip,

a difference between the first main pad density and the second main pad density is less than a reference pad density, and

the first dummy pad density is determined by Equations 3 to 5,

D _ DP 1= k 1* D _ MP 1+ k 2* D _ MP 2:  Equation 3,

k 1= A _ MP 1/( A _ MP 1+ A _ MP 2+ A _ DP 1):  Equation 4,

k 2= A _ MP 2/( A _ MP 1+ A _ MP 2+ A _ DP 1):  Equation 5,

wherein D_DP 1 is the first dummy pad density, D_MP 1 is the first main pad density, D_MP 2 is the second main pad density, A_DP 1 is an area of the first dummy pad region, A_MP 1 is an area of the first main pad region, and A_MP 2 is an area of the second main pad region.

9. The semiconductor package of claim 8 , wherein the reference pad density is about 2% to about 5%.

10. The semiconductor package of claim 8 , wherein the first dummy pad density is less than the first main pad density, and the second main pad density is less than the first dummy pad density.

11. The semiconductor package of claim 8 , wherein the first dummy pad density is less than the first main pad density, and the first dummy pad density is less than the second main pad density.

12. The semiconductor package of claim 7 , wherein:

the first main connection pad structures are arranged in a first main pad region, the first main connection pad structures have a first main pad density when viewed from the top of the first semiconductor chip, the second main connection pad structures are arranged in a second main pad region, the second main connection pad structures have a second main pad density when viewed from the top of the first semiconductor chip,

a difference between the first main pad density and the second main pad density is greater than a reference pad density,

the first dummy connection pad structures are arranged in a first dummy pad region, the first dummy pad region comprises n sub-dummy pad regions, n is determined by Equation 6,

( D _ MP 1 −D _ MP 2)/( DCR )−1 ≤n <( D _ MP 1 −D _ MP 2)/( DCR ):  Equation 6,

wherein n is a natural number, DCR is the reference pad density, and

a k-th sub-dummy pad region has a sub-dummy pad density according to Equation 7,

D _ DPk =( n+ 1− k )/( n+ 1)* D _ MP 1+( k )/( n+ 1)* D _ MP 2:  Equation 7,

wherein D_DPk is a density of the k-th sub-dummy pad region, k is a natural number from 1 to n, D_MP 1 is the first main pad density, and D_MP 2 is the second main pad density.