IP Library › Granted Patent US 11,887,905
Granted Patent B2
US 11,887,905 · App. 17/469,017 · Granted Jan 30, 2024

Semiconductor device

Inventors: Susumu Yamada (Kariya, JP); Shoichiro Omae (Kariya, JP); Takuo Nagase (Kariya, JP)
Assignee: DENSO CORPORATION
H01L23/3107H01L23/49517H01L23/49537H01L23/49562H01L24/40H01L25/18H01L23/36H01L2924/1305H01L2924/13091H01L2924/181
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Quick Facts
Patent No.
US 11,887,905
App. No.
17/469,017
Granted
Jan 30, 2024
Kind
B2
Abstract

The semiconductor device includes a semiconductor element having first and second main electrodes, first and second substrates connected to the first and second main electrodes, respectively, first and second main terminals connected to the first and second main electrodes via the first and second substrates, respectively, and a bonding member. The bonding member is interposed between the first and second main electrodes and between the first and second substrates, respectively. At least one of the first and second main terminals includes a plurality of terminals. The first and second main terminals are alternately arranged in one direction orthogonal to the thickness direction of the semiconductor element. The first and second main terminals are directly bonded to the first and second substrates without the bonding member.

Claims (23)

1. A semiconductor device comprising:

at least one semiconductor element having a first main electrode disposed on one surface side, and a second main electrode disposed on a back surface side opposite to the one surface side in a thickness direction;

a substrate arranged to sandwich the semiconductor element and having a first substrate arranged on the one surface side and electrically connected to the first main electrode, and a second substrate arranged on the back surface side and electrically connected to the second main electrode;

a main terminal including at least one first main terminal electrically connected to the first main electrode via the first substrate, and at least one second main terminal electrically connected to the second main electrode via the second substrate; and

a bonding member, wherein:

the bonding member is interposed between the first main electrode and the first substrate, and between the second main electrode and the second substrate, respectively;

at least one of the first main terminal and the second main terminal in the main terminal includes a plurality of terminals;

the first main terminal and the second main terminal are alternately arranged, and a side surface of the first main terminal and a side surface of the second main terminal face each other in a direction orthogonal to the thickness direction of the semiconductor element;

the first main terminal is directly bonded to the second substrate without the bonding member and

the second main terminal is directly bonded to the second substrate without the bonding member.

2. The semiconductor device according to claim 1 , wherein:

the substrate includes an opposing portion in which the first substrate and the second substrate face each other in the thickness direction, and a non-opposing portion connecting to the opposing portion of the second substrate and not facing the first substrate;

the first main terminal is directly bonded to a surface of the first substrate on a second substrate side without the bonding member; and

the second main terminal is directly bonded to a surface of the non-opposing portion of the second substrate on a first substrate side without the bonding member.

3. The semiconductor device according to claim 2 , wherein:

the first main terminal is directly bonded to the opposing portion of the first substrate; and

the first main terminal includes a connection portion with the first substrate, and an extension portion extending from the connection portion and arranged to face the second substrate at a position closer to the second substrate than the connection portion.

4. The semiconductor device according to claim 3 , wherein:

the first main terminal bridges the non-opposing portion in a plan view from the thickness direction; and

the extension portion is arranged to face at least the non-opposing portion of the second substrate.

5. The semiconductor device according to claim 1 , further comprising:

a sealing resin body that integrally seals at least a part of the semiconductor element, at least a part of the substrate, and a part of the main terminal, wherein:

all of the main terminal protrudes from one surface of the sealing resin body to an outside of the sealing resin body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2021
From: YAMADA, SUSUMU; OMAE, SHOICHIRO; NAGASE, TAKUO
To: DENSO CORPORATION
Reel/Frame 057625/0330 →
Priority Claims (1)
JP 2019-043888 · Mar 11, 2019 · national
Continuity (2)
Continuation PCTJP2020005568 · Feb 13, 2020
Related Publication 20210407876A1 · Dec 30, 2021