Electronic power module
An electronic power module includes at least a semiconductor chip having at least one electronic power component and two metal layers between which the semiconductor chip is directly secured. At least a first of the two metal layers forms a redistribution layer having several distinct metal portions, each electrically connected to at least one electrical contact pad of the semiconductor chip, and/or at least one second of the two metal layers includes at least one first structured face arranged against the semiconductor chip and having at least one pad formed in a part of its thickness.
1. A power electronic module including:
at least one semiconductor chip comprising at least one power electronic component;
at least two metal layers between which the at least one semiconductor chip is directly secured, wherein at least a first of the at least two metal layers includes at least one first structured face disposed against the at least one semiconductor chip and comprising at least one pad formed in part of a thickness thereof; and
a first metallised support to which the at least the first of the at least two metal layers is secured by a first layer of solder.
2. The power electronic module according to claim 1 , wherein at least a second of the at least two metal layers forms a redistribution layer comprising a plurality of distinct metal portions each electrically connected to at least one electrical contact pad of the at least one semiconductor chip.
3. The power electronic module according to claim 2 , wherein the second of the at least two metal layers has a thickness greater than approximately 100 μm and/or includes copper.
4. The power electronic module according to claim 2 , wherein the second of the at least two metal layers includes a central layer comprising at least a first metal and covered with another layer of at least a second metal different from the first metal and against which said at least one semiconductor chip is secured.
5. The power electronic module according to claim 2 , wherein the first of the at least two metal layers includes a second face, opposite to a first face disposed against the at least one semiconductor chip, secured at least to one of the following elements:
a second metallised substrate,
a power contact,
a decoupling capacitor, and
an electronic control device.
6. The power electronic module according to claim 2 , wherein the second of the at least two metal layers includes a first structured face disposed against the semiconductor chip and comprising pads formed in a part of a thickness thereof.
7. The power electronic module according to claim 1 , wherein a second face, opposite to the first structured face, of the first of the at least two metal layers includes a rim laterally delimiting a space wherein the first layer of solder is disposed.
8. The power electronic module according to claim 1 , wherein the at least one pad of the first structured face of the first of the at least two metal layers includes a cross section, in a plane passing through the first structured face, a form of which includes rounded corners or is substantially circular.
9. The power electronic module according to claim 1 , wherein the first of the at least two metal layers at least one of:
has a thickness greater than approximately 100 μm, and
includes copper.
10. The power electronic module according to claim 1 , wherein the first of the at least two metal layers includes a central layer comprising at least a first metal and covered with another layer of at least a second metal different from the first metal and against which the at least one semiconductor chip is secured.
11. The power electronic module according to claim 1 , including at least one second semiconductor chip comprising at least one second power electronic component and disposed directly between said at least two metal layers.
12. A power electronic module including:
at least one semiconductor chip comprising at least one power electronic component; and
at least two metal layers between which said at least one semiconductor chip is directly secured, wherein at least a first of said at least two metal layers forms a redistribution layer comprising a plurality of distinct metal portions each electrically connected to at least one electrical contact pad of said at least one semiconductor chip.
13. The power electronic module according to claim 12 , wherein the first of the at least two metal layers includes a central layer comprising at least a first metal and covered with another layer of at least a second metal different from the first metal and against which the at least one semiconductor chip is secured.
14. The power electronic module according to claim 12 , wherein the first of the at least two metal layers includes a first structured face disposed against the semiconductor chip and comprising pads formed in a part of a thickness thereof.