Display with color conversion layer and isolation walls
A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a first color conversion layer over each of a first plurality of light emitting diodes, a second color conversion layer over each of a second plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array. The micro-LEDs of the array are configured to generate illumination of the same wavelength range, the first color conversion layer converts the illumination to light of a first color, and the second color conversion layer converts the illumination to light of a different second color.
1. A multi-color display, comprising:
a backplane having backplane circuitry;
an array of semiconductor micro-LEDs electrically integrated with backplane circuitry of the backplane, the semiconductor micro-LEDs of the array configured to generate illumination of the same wavelength range;
a first color conversion layer over each of a first plurality of light emitting diodes from the array of semiconductor micro-LEDs to convert the illumination from the first plurality of light emitting diodes to light of a first color, the first color conversion layer comprising a polymer cured by illumination of the wavelength range generated by the semiconductor micro-LEDs;
a second color conversion layer over each of a second plurality of light emitting diodes from the array of semiconductor micro-LEDs to convert the illumination from the second plurality of light emitting diodes to light of a different second color, the second color conversion layer comprising polymer cured by illumination of the wavelength range generated by the semiconductor micro-LEDs; and
a plurality of isolation walls that separate adjacent micro-LEDs of the array and that substantially block illumination from the first plurality of light emitting diodes from reaching the second color conversion layer over each of the second plurality of light emitting diodes, the plurality of isolation walls laterally spaced from the micro-LEDs and extending from the backplane to above respective top surfaces of the first color conversion layer and the second color conversion layer.
2. The display of claim 1 , further comprising a third color conversion layer over each of a third plurality of light emitting diodes from the array of semiconductor micro-LEDs to convert the illumination from the third plurality of light emitting diodes to light of a different third color, and the plurality of isolation walls extend above respective top surfaces of the third color conversion layer.
3. The display of claim 2 , wherein the first color, second color and third color are selected from blue, green and red.
4. The display of claim 1 , wherein the semiconductor micro-LEDs of the array of semiconductor micro-LEDs are configured to generate ultraviolet light.
5. The display of claim 1 , wherein the array of semiconductor micro-LEDs includes a third plurality of light emitting diodes, and semiconductor micro-LEDs of the array of semiconductor micro-LEDs are configured to generate visible light of a different third color.
6. The display of claim 5 , wherein no color conversion layer is formed over the third plurality of light emitting diodes.
7. The display of claim 5 , wherein the light emitting diodes of the array of light emitting diodes are configured to generate blue or violet light.
8. The display of claim 7 , wherein the first color and second color are selected from green and red.
9. The display of claim 8 , wherein the first color is green and the second color is red.
10. The display of claim 1 , wherein the isolation walls comprise a photoresist.
11. The display of claim 1 , wherein the isolation walls comprise a metal.
12. The display of claim 1 , wherein material of the isolation wall is absent from between the backplane and the semiconductor micro-LEDs.
13. The display of claim 1 , comprising a ultraviolet blocking layer over the array of light emitting diodes.
14. The display of claim 1 , wherein the semiconductor micro-LEDs comprise III-V semiconductor LEDs.
15. The display of claim 13 , wherein the ultraviolet blocking layer fills recesses defined by the plurality of isolation walls above respective top surfaces of the first color conversion layer and the second color conversion layer.
16. The display of claim 13 , wherein the ultraviolet blocking layer extends above the plurality of isolation walls.
17. The display of claim 1 , wherein the isolation walls can have a height of about 3 to 20 μm and a width of about 2 to 10 μm.