Monolayer transition metal dichalcogenides having giant valley-polarized Rydberg excitons revealed by magneto-photocurrent spectroscopy
A transition metal dichalcogenides device includes a substrate, a bottom layer of boron nitride, a tungsten diselenide monolayer on the bottom layer of boron nitride, a top layer of boron nitride on the tungsten diselenide monolayer such that the bottom and top layers of boron nitride at least partially encapsulate the tungsten diselenide monolayer, a source electrode on the substrate, a drain electrode on the substrate, and a top gate electrode on the top layer of boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.
1. A transition metal dichalcogenides device comprising:
a substrate;
a bottom layer of boron nitride;
a tungsten diselenide monolayer positioned on the bottom layer of boron nitride;
a top layer of boron nitride positioned on the tungsten diselenide monolayer such that the bottom layer of boron nitride and the top layer of boron nitride at least partially encapsulate the tungsten diselenide monolayer;
a source electrode positioned on the substrate;
a drain electrode positioned on the substrate; and
a top gate electrode positioned on the top layer of boron nitride.
2. The device of claim 1 , wherein the source electrode and the drain electrode each comprise gold and few-layer graphene.
3. The device of claim 2 , wherein the few-layer graphene is positioned between the bottom layer of boron nitride and the top layer of boron nitride and partially on top of the tungsten diselenide monolayer.
4. The device of claim 1 , wherein the top gate electrode comprises gold and few-layer graphene.
5. The device of claim 1 , wherein at least one of the bottom layer of boron nitride and the top layer of boron nitride comprises hexagonal few-layer boron nitride.
6. The device of claim 1 , wherein the substrate comprises at least one of a silicon dioxide layer and a silicon layer.
7. The device of claim 1 , wherein the tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field.
8. The device of claim 7 , wherein the excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.
9. A system for revealing excitons in a transition metal dichalcogenides comprising:
a broadband light source configured to emit excitation photon energy;
a tunable filter configured to filter to excitation photon energy to a predetermined wavelength bandwidth;
a linear polarizer configured to linearly polarize the filtered excitation photon energy;
a quarter waveplate configured to convert the linearly polarized excitation photon energy into circularly polarized excitation photon energy; and
a focusing element configured to focus the circularly polarized excitation photon energy to excite the transition metal dichalcogenides positioned on a piezo stage microscope;
wherein an external magnetic field is applied to the transition metal dichalcogenides when it is exposed to the focused circularly polarized excitation photon energy.
10. The system of claim 9 , further comprising a mechanical chopper positioned between the linear polarizer and the quarter waveplate, and a lock-in amplifier configured to measure a photocurrent modulated by the mechanical chopper.
11. The system of claim 9 , further comprising a half waveplate positioned between the linear polarizer and the quarter waveplate.
12. The system of claim 9 , wherein the broadband light source comprises a supercontinuum laser.
13. The system of claim 9 , wherein the focusing element comprises a 50× objective configured to focus the circularly polarized excitation photon energy to a spot size of about 2 μm.
14. The system of claim 9 , wherein the predetermined wavelength bandwidth is about 1 nm.
15. The system of claim 9 , wherein the transition metal dichalcogenides comprises:
a substrate;
a bottom layer of boron nitride;
a tungsten diselenide monolayer positioned on the bottom layer of boron nitride;
a top layer of boron nitride positioned on the tungsten diselenide monolayer such that the bottom layer of boron nitride and the top layer of boron nitride at least partially encapsulate the tungsten diselenide monolayer;
a source electrode positioned on the substrate;
a drain electrode positioned on the substrate; and
a top gate electrode positioned on the top layer of boron nitride.
16. The system of claim 15 , wherein the tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to the focused circularly polarized excitation photon energy and the external magnetic field.
17. The system of claim 16 , wherein the excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.
18. A method of revealing excitons in a transition metal dichalcogenides comprising:
providing the transition metal dichalcogenides, the transition metal dichalcogenides comprising:
a substrate;
a bottom layer of boron nitride;
a tungsten diselenide monolayer positioned on the bottom layer of boron nitride;
a top layer of boron nitride positioned on the tungsten diselenide monolayer such that the bottom layer of boron nitride and the top layer of boron nitride at least partially encapsulate the tungsten diselenide monolayer;
a source electrode positioned on the substrate;
a drain electrode positioned on the substrate; and
a top gate electrode positioned on the top layer of boron nitride;
exposing the transition metal dichalcogenides to an external magnetic field;
emitting excitation photon energy from a broadband light source;
filtering, via a tunable filter, the excitation photon energy to a predetermined wavelength bandwidth;
linearly polarizing, via a linear polarizer, the filtered excitation photon energy;
converting, via a quarter waveplate, the linearly polarized excitation photon energy to circularly polarized excitation photon energy; and
focusing, via a 50× objective, the circularly polarized excitation photon energy to a spot size of about 2 μm onto the tungsten diselenide monolayer of the transition metal dichalcogenides.
19. The method of claim 18 , wherein the tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to the focused circularly polarized excitation photon energy and the external magnetic field.
20. The method of claim 19 , wherein the excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2s to 11s when the external magnetic field is in the range of about −17 T to about 17 T.