Memory device which generates improved write voltage according to size of memory cell
Disclosed is a memory device including a magnetic memory element. The memory device includes a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state, a voltage generator configured to generate a code value based on the value of the write voltage, and a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region.
1. A memory device comprising:
a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state, the value of the reference resistor determined by comparing a voltage drop across a first reference bit line in the first region with a voltage drop across a second reference bit line in the second region;
a voltage generator configured to generate a code value based on the value of the write voltage; and
a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region.
2. The memory device of claim 1 , wherein the memory cell array includes a plurality of memory cells, and
each of the plurality of memory cells includes:
a cell transistor including a first end, a second end, and a gate electrode, the first end connected with a source line and the gate electrode connected with a word line; and
a magnetic tunneling junction including a first end and a second end, the first end of the magnetic tunneling junction connected with the second end of the cell transistor and the second end of the magnetic tunneling junction connected with a bit line.
3. The memory device of claim 2 , wherein
at least one memory cell of the plurality of memory cells are in the second region and
the second region is configured such that the voltage drop across the second region is varied by connecting or disconnecting one at least one cell transistor to a reference source line.
4. The memory device of claim 1 , wherein the write driver includes:
at least one first type of transistor, each of the at least one first type of transistor including a first end connected with a first power supply voltage and a second end connected with an output node; and
at least one second type of transistor, each of the at least one second type of transistor including a first end connected with a second power supply voltage and a second end connected with the output node.
5. The memory device of claim 4 , wherein
the code value includes a first code value and a second code value,
the at least one first type of transistors are configured to receive bits of the first code value from the voltage generator, respectively, and
the at least one second type of transistors are configured to receive bits of the second code value from the voltage generator, respectively.
6. The memory device of claim 1 , wherein the second region includes an anti-fuse cell array.
7. The memory device of claim 1 , further comprising:
a current source configured to generate a first read current and a second read current; and
a sensing circuitry including a sense amplifier configured to amplify a difference between a first voltage drop and a second voltage drop, the first voltage drop being at a first node according to an application of the first read current to a first bit line, the first bit line connected with a selected memory cell, the second voltage drop at a second node according to an application of the second read current to a reference bit line.
8. The memory device of claim 7 , further comprising:
a resistor having the value of the reference resistor connected with the reference bit line.
9. The memory device of claim 8 , wherein a gate electrode of a transistor included in the memory cell array corresponds to gate polysilicon, and
the resistor having the value of the reference resistor includes the gate polysilicon.
10. The memory device of claim 7 , further comprising:
at least one first memory cell, wherein the at least one first memory cell is connected with the reference bit line, the at least one first memory cell being identical in structure to the selected memory cell.
11. A memory device comprising:
a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state;
a voltage generator configured to generate a code value based on the value of the write voltage;
a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region;
a current source configured to generate a first read current and a second read current; and
a sensing circuitry including a sense amplifier configured to amplify a difference between a first voltage drop and a second voltage drop, the first voltage drop being at a first node according to an application of the first read current to a first bit line, the first bit line connected with a selected memory cell, the second voltage drop at a second node according to an application of the second read current to a reference bit line.
12. The memory device of claim 11 , further comprising:
a resistor having the value of the reference resistor connected with the reference bit line.
13. The memory device of claim 12 , wherein a gate electrode of a transistor included in the memory cell array corresponds to gate polysilicon, and
the resistor having the value of the reference resistor includes the gate polysilicon.
14. The memory device of claim 11 , further comprising:
at least one first memory cell, wherein the at least one first memory cell is connected with the reference bit line, the at least one first memory cell being identical in structure to the selected memory cell.
15. The memory device of claim 11 , wherein the second region includes an anti-fuse cell array.
16. The memory device of claim 11 , wherein the memory cell array includes a plurality of memory cells, and
each of the plurality of memory cells includes:
a cell transistor including a first end, a second end, and a gate electrode, the first end connected with a source line and the gate electrode connected with a word line; and
a magnetic tunneling junction including a first end and a second end, the first end of the magnetic tunneling junction connected with the second end of the cell transistor and the second end of the magnetic tunneling junction connected with a bit line.
17. A memory device comprising:
a memory cell array including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor for determining whether a programmed memory cell is in a parallel state or anti-parallel state;
a voltage generator configured to generate a code value based on the value of the write voltage; and
a write driver configured to drive a write current based on the code value, the write current being a current for storing data in the first region, wherein the write driver includes,
at least one first type of transistor, each of the at least one first type of transistor including a first end connected with a first power supply voltage and a second end connected with an output node,
at least one second type of transistor, each of the at least one second type of transistor including a first end connected with a second power supply voltage and a second end connected with the output node,
the code value includes a first code value and a second code value,
the at least one first type of transistors are configured to receive bits of the first code value from the voltage generator, respectively, and
the at least one second type of transistors are configured to receive bits of the second code value from the voltage generator, respectively.
18. The memory device of claim 17 , wherein the second region includes an anti-fuse cell array.
19. The memory device of claim 17 , wherein the memory cell array includes a plurality of memory cells, and
each of the plurality of memory cells includes:
a cell transistor including a first end, a second end, and a gate electrode, the first end connected with a source line and the gate electrode connected with a word line; and
a magnetic tunneling junction including a first end and a second end, the first end of the magnetic tunneling junction connected with the second end of the cell transistor and the second end of the magnetic tunneling junction connected with a bit line.