IP Library › Granted Patent US 11,894,283
Granted Patent B2
US 11,894,283 · App. 17/288,747 · Granted Feb 6, 2024

Display substrate and method for preparation thereof, and display device

Inventors: Yingming Liu (Beijing, CN); Haisheng Wang (Beijing, CN); Xiaoliang Ding (Beijing, CN); Lei Wang (Beijing, CN); Pengpeng Wang (Beijing, CN)
Assignee: BOE Technology Group Co., Ltd.
H01L23/373H01L27/1218H10K59/126H10K59/1213H10K59/1201
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Quick Facts
Patent No.
US 11,894,283
App. No.
17/288,747
Granted
Feb 6, 2024
Kind
B2
Abstract

The embodiments of the present application provide a display substrate and method for preparation thereof, and a display device. The display substrate includes a base, a piezoelectric layer arranged on the base, and a thin-film transistor arranged on the piezoelectric layer, said piezoelectric layer being configured to convert heat generated by the thin-film transistor into sound waves.

Claims (19)

1. A display substrate, comprising a base, a piezoelectric layer arranged on the base, and thin-film transistors arranged on the piezoelectric layer, the piezoelectric layer being configured to convert heat generated by the thin-film transistors into sound waves.

2. The display substrate according to claim 1 , wherein a material of the piezoelectric layer comprises lead zirconate titanate piezoelectric ceramic composite crystals, zinc oxide, aluminium nitride or polyvinylidene fluoride.

3. The display substrate according to claim 1 , wherein a thickness of the piezoelectric layer is 1 μm to 20 μm.

4. The display substrate according to claim 1 , wherein orthogonal projections of the thin-film transistors on the base are in an orthogonal projection of the piezoelectric layer on the base.

5. The display substrate according to claim 1 , wherein the thin-film transistors comprise top-gate-type thin-film transistors, and active layers of the thin-film transistors are in direct contact with the piezoelectric layer.

6. The display substrate according to claim 1 , further comprising a shielding layer, the shielding layer being arranged between the base and the piezoelectric layer.

7. The display substrate according to claim 6 , wherein a material of the shielding layer comprises a metal material.

8. The display substrate according to claim 6 , wherein the shielding layer comprises shielding blocks in one-to-one correspondence to the thin-film transistors, and orthogonal projections of the shielding blocks on the base overlap with orthogonal projections of the thin-film transistors corresponding to the shielding blocks on the base.

9. The display substrate according to claim 8 , wherein orthogonal projections of channel regions of the thin-film transistors on the base are in the orthogonal projections of the shielding blocks corresponding to the thin-film transistors on the base.

10. The display substrate according to claim 6 , further comprising an electrode lead connected with the shielding layer, the electrode lead being connected with a peripheral circuit and being configured to apply a voltage to the shielding layer.

11. A display device, comprising the display substrate according to claim 1 .

12. A method for preparation of a display substrate, comprising:

forming a piezoelectric layer on a base; and

forming thin-film transistors on the piezoelectric layer, and enabling the piezoelectric layer to convert heat generated by the thin-film transistors into sound waves.

13. The method for preparation according to claim 12 , wherein a material of the piezoelectric layer comprises lead zirconate titanate piezoelectric ceramic composite crystals, zinc oxide, aluminium nitride or polyvinylidene fluoride.

14. The method for preparation according to claim 12 , wherein a thickness of the piezoelectric layer is 1 μm to 20 μm.

15. The method for preparation according to claim 12 , wherein before the forming the piezoelectric layer on the base, the method further comprises:

forming a shielding layer on the base.

16. The method for preparation according to claim 15 , wherein a material of the shielding layer comprises a metal material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2021
From: LIU, YINGMING; WANG, HAISHENG; DING, XIAOLIANG; WANG, LEI; WANG, PENGPENG
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 056040/0651 →
Priority Claims (1)
CN 201910489880.6 · Jun 6, 2019 · national
Continuity (1)
Related Publication 20210398876A1 · Dec 23, 2021
Cited By (1)
US 12,471,313