Apparatus including integrated segments and methods of manufacturing the same
Semiconductor devices including one or more interfacing segments patterned within an outer protective layer and associated systems and methods are disclosed herein. The one or more interfacing segments may provide attachment interfaces/surfaces for connection pads. The one or more interfacing segments or a portion thereof may remain uncovered or exposed and provide warpage control for the corresponding semiconductor device.
1. An apparatus, comprising:
a semiconductor substrate;
a passivation layer over a surface of the semiconductor substrate; and
an interfacing segment patterned within the passivation layer, wherein
the interfacing segment includes electrical isolative material,
the interfacing segment having a bottom surface that is above the semiconductor substrate,
the interfacing segment and the passivation layer include different material, and
the interfacing segment and the passivation layer are coplanar with each other.
2. The apparatus of claim 1 , wherein:
the passivation layer includes a tetraethyl orthosilicate (TEOS) layer; and
the interfacing segment includes silicon nitride (SiN).
3. The apparatus of claim 1 , further comprising:
a connection pad directly coupled to the interfacing segment, the connection pad configured to interface with a structure external to the apparatus.
4. The apparatus of claim 3 , wherein:
the connection pad has a pad width measured along a lateral direction; and
the interfacing segment has an interfacing width along the lateral direction, wherein the interfacing width is greater than the pad width.
5. The apparatus of claim 4 , wherein one or more peripheral portions of the interfacing segment laterally extend past one or more corresponding lateral edges of the connection pad.
6. The apparatus of claim 5 , wherein:
the interfacing segment is surrounded by the passivation layer, and the peripheral portions of the interfacing segment directly contact the passivation layer; and
the connection pad is surrounded by the peripheral portions of the interfacing segment without overlapping the passivation layer.
7. The apparatus of claim 3 , wherein the connection pad is a thermal pad electrically isolated from active circuits on the apparatus and configured to remove thermal energy away from the apparatus.
8. The apparatus of claim 7 , wherein the thermal pad includes a bottom surface extending between peripheral edges and directly attached to the interfacing segment without overlapping the passivation layer.
9. The apparatus of claim 3 , wherein the connection pad is an electrical pad electrically coupled to one or more circuits on the apparatus.
10. The apparatus of claim 9 , further comprising:
a through-silicon via (TSV) at least partially extending along a vertical direction and through a portion of the semiconductor substrate, the TSV configured to electrically couple the electrical pad to the one or more circuits on the semiconductor substrate.
11. The apparatus of claim 10 , wherein a portion of the TSV between the electrical pad and the semiconductor substrate is surrounded by the interfacing segment.
12. The apparatus of claim 11 , wherein the interfacing segment and the passivation layer have matching thicknesses.
13. The apparatus of claim 1 , wherein the interfacing segment has an exposed surface extending between peripheral edges of the interfacing segment.