Semiconductor device and manufacturing method for semiconductor device
Provided is a semiconductor device including: a semiconductor substrate including a bulk donor; and a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, in which a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a concentration of the bulk donor of the semiconductor substrate or lower. The doping concentration at the shallowest concentration peak may be lower than a reference carrier concentration obtained when current that is 1/10 of rated current flows between an upper surface and the lower surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate including a bulk donor; and
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower, and
the doping concentration at the shallowest concentration peak is lower than a reference carrier concentration obtained when current that is 1/10 of rated current flows between an upper surface and the lower surface of the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein doping concentrations at all of the doping concentration peaks of the first buffer region are 50 times as high as the bulk donor concentration or lower.
3. The semiconductor device according to claim 1 , wherein the first buffer region has two or more of the doping concentration peaks, and a doping concentration at at least one of the doping concentration peaks is higher than 50 times as high as the bulk donor concentration.
4. The semiconductor device according to claim 2 , wherein the first buffer region has two or more of the doping concentration peaks, and a doping concentration at at least one of the doping concentration peaks is higher than the doping concentration at the shallowest concentration peak.
5. The semiconductor device according to claim 4 , wherein the doping concentration at the shallowest concentration peak is lower than a doping concentration of the doping concentration peak that is closest to the shallowest concentration peak.
6. The semiconductor device according to claim 1 further comprising a trench portion arranged on an upper surface of the semiconductor substrate, wherein
when a concentration obtained by integrating a doping concentration of the semiconductor substrate from a lower end of the trench portion toward the lower surface of the semiconductor substrate is defined as an integral concentration, and a position at which the integral concentration reaches a critical integral concentration of the semiconductor substrate is defined as a critical position,
the critical position overlaps the shallowest concentration peak or is arranged closer to the trench portion than the shallowest concentration peak is.
7. The semiconductor device according to claim 1 further comprising a cathode region of the first conductivity type, having a peak value of a doping concentration that is higher than the shallowest concentration peak, the cathode region being provided between the shallowest concentration peak and the lower surface of the semiconductor substrate.
8. The semiconductor device according to claim 7 further comprising a lower surface side region of a second conductivity type provided between the shallowest concentration peak and the lower surface of the semiconductor substrate.
9. The semiconductor device according to claim 7 , wherein a local minimum value of a valley portion of a donor concentration between the shallowest concentration peak and the cathode region is smaller than a second concentration peak adjacent to the shallowest concentration peak on a side that is closer to an upper surface of the semiconductor substrate than the shallowest concentration peak is.
10. The semiconductor device according to claim 1 further comprising a collector region of a second conductivity type provided between the shallowest concentration peak and the lower surface of the semiconductor substrate.
11. The semiconductor device according to claim 1 comprising: a transistor portion; and a diode portion, wherein
the diode portion includes:
the first buffer region; and
a cathode region of the first conductivity type provided between the first buffer region and the lower surface of the semiconductor substrate, and
the transistor portion includes:
a second buffer region of the first conductivity type, the second buffer region being provided on the lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in the depth direction of the semiconductor substrate; and
a collector region of a second conductivity type provided between the second buffer region and the lower surface of the semiconductor substrate.
12. A semiconductor device comprising:
a semiconductor substrate including a bulk donor;
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate;
a transistor portion; and
a diode portion, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower,
the diode portion includes:
the first buffer region; and
a cathode region of the first conductivity type provided between the first buffer region and the lower surface of the semiconductor substrate,
the transistor portion includes:
a second buffer region of the first conductivity type, the second buffer region being provided on the lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in the depth direction of the semiconductor substrate; and
a collector region of a second conductivity type provided between the second buffer region and the lower surface of the semiconductor substrate, and
doping concentrations at each of the doping concentration peaks in the second buffer region are the same as doping concentrations at the doping concentration peaks provided at the same depth positions in the first buffer region.
13. A semiconductor device comprising:
a semiconductor substrate including a bulk donor;
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate;
a transistor portion; and
a diode portion, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower,
the diode portion includes:
the first buffer region; and
a cathode region of the first conductivity type provided between the first buffer region and the lower surface of the semiconductor substrate,
the transistor portion includes:
a second buffer region of the first conductivity type, the second buffer region being provided on the lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in the depth direction of the semiconductor substrate; and
a collector region of a second conductivity type provided between the second buffer region and the lower surface of the semiconductor substrate, and
a doping concentration at a doping concentration peak, out of the doping concentration peaks of the second buffer region, closest to the lower surface of the semiconductor substrate is higher than the doping concentration at the shallowest concentration peak of the first buffer region.
14. A semiconductor device comprising:
a semiconductor substrate including a bulk donor;
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate;
a transistor portion; and
a diode portion, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower,
the diode portion includes:
the first buffer region; and
a cathode region of the first conductivity type provided between the first buffer region and the lower surface of the semiconductor substrate,
the transistor portion includes:
a second buffer region of the first conductivity type, the second buffer region being provided on the lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in the depth direction of the semiconductor substrate; and
a collector region of a second conductivity type provided between the second buffer region and the lower surface of the semiconductor substrate, and
a local minimum value of a valley portion of a donor concentration between the shallowest concentration peak and the cathode region is smaller than a donor concentration at a boundary between a shallowest concentration peak of the second buffer region and the collector region.
15. A semiconductor device comprising:
a semiconductor substrate including a bulk donor; and
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower, and
the doping concentration at the shallowest concentration peak, out of the doping concentration peaks of the first buffer region, is lower than the doping concentration peak farthest from the lower surface of the semiconductor substrate.
16. The semiconductor device according to claim 15 , wherein the doping concentration at the shallowest concentration peak, out of the doping concentration peaks of the first buffer region, is lower than any of the other doping concentration peaks.
17. A semiconductor device comprising:
a semiconductor substrate including a bulk donor; and
a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, wherein
a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a bulk donor concentration of the semiconductor substrate or lower, and
the doping concentration at the shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 10 times as high as the bulk donor concentration or lower.