Multi-step process for flowable gap-fill film
Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.
1. A method for semiconductor processing, the method comprising:
transferring into a multi pressure processing chamber a substrate having thereon a film deposited by a flowable process; performing a first process at between 10 milliTorr and less than or equal to 1 Bar, within the processing chamber, on the film on the substrate, the first process comprising stabilizing bonds in the film to form a stabilized film, wherein the first process is one of at least a thermal oxidation process, a plasma oxidation process, a stabilizing thermal process, or a stabilizing plasma process performed at a temperature of between about 300° C. and about 1000° C., or a steam oxidation process; and performing a second process at greater than or equal to 1 Bar, within the multi pressure processing chamber, on the film on the substrate, the second process comprising densifying the stabilized film, wherein the second process is an anneal process performed at a temperature of between about 300° C. and about 1000° C.
2. The method of claim 1 , wherein:
performing the first process includes flowing a first process gas composition; and
performing the second process includes flowing a second process gas composition different than the first process gas composition.
3. The method of claim 1 , wherein:
performing the first process includes converting the film to a different composition.
4. The method of claim 1 , wherein:
the first process is performed including flowing a first process gas including oxygen, ozone, nitrous oxide, nitric oxide, or a combination thereof; and
the second process is performed including flowing a second process gas including steam, ammonia, nitrous oxide, nitric oxide, or a combination thereof.
5. The method of claim 1 , wherein:
the first process is performed including flowing a first process gas including ammonia; and
the second process is performed including flowing a second process gas including steam, nitrous oxide, nitric oxide, or a combination thereof.
6. The method of claim 1 , wherein:
the first process is performed including flowing a first process gas including steam and is performed at a first pressure and at a first temperature; and
the second process is performed including flowing a second process gas including steam, ammonia, nitrous oxide, nitric oxide, or a combination thereof and is performed at a second pressure and at a second temperature, the second pressure being greater than the first pressure, the second temperature being greater than the first temperature.
7. The method of claim 1 , wherein the multi pressure processing chamber comprises:
an inner processing chamber disposed within and in an outer processing chamber, the first process being performed in the outer chamber and the second process being performed in the inner chamber; and
a valve assembly comprising a first state wherein the valve assembly isolates the inner chamber from the outer chamber and a second state wherein the inner chamber and the outer chamber are in fluid communication.