Fin shaping and integrated circuit structures resulting therefrom
Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.
1. An integrated circuit structure, comprising:
a semiconductor fin having a protruding fin portion above an isolation structure above a substrate, the protruding fin portion having substantially vertical upper sidewalls and outwardly tapered lower sidewalls, and the semiconductor fin further comprising a sub-fin portion on the substrate and within an opening in the isolation structure, the sub-fin portion in contact with the protruding portion, and the sub-fin portion having an upper horizontal surface extending laterally beyond the protruding fin portion;
a gate stack over and conformal with the protruding fin portion of the semiconductor fin;
a first source or drain region at a first side of the gate stack; and
a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
2. The integrated circuit structure of claim 1 , wherein the sub-fin portion has a width greater than a width of the protruding portion where the sub-fin portion meets the protruding portion.
3. The integrated circuit structure of claim 1 , wherein the semiconductor fin is on a semiconductor layer on the substrate, the semiconductor fin comprising a semiconductor material different than the semiconductor layer.
4. The integrated circuit structure of claim 1 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon fin.
5. The integrated circuit structure of claim 1 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon germanium or germanium fin.
6. The integrated circuit structure of claim 1 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a group III-V material fin.
7. The integrated circuit structure of claim 1 , wherein the first and second source or drain regions are embedded source or drain regions.
8. The integrated circuit structure of claim 1 , wherein the first and second source or drain regions are formed in regions of the semiconductor fin at the first and second sides of the gate stack, respectively.
9. The integrated circuit structure of claim 1 , wherein the gate stack comprises a gate dielectric comprising a high-k dielectric material, and a gate electrode comprising a metal.
10. An integrated circuit structure, comprising:
a semiconductor fin having a protruding fin portion above an isolation structure above a substrate, the protruding fin portion having substantially vertical upper sidewalls and inwardly tapered lower sidewalls, and the protruding fin portion comprising a same semiconductor material from a bottom of the protruding fin portion to a top of the protruding fin portion, and the semiconductor fin further comprises a sub-fin portion on the substrate and within an opening in the isolation structure, the sub-fin portion continuous with the protruding portion, wherein the sub-fin portion has a width greater than a width of the protruding portion where the sub-fin portion meets the protruding portion;
a gate stack over and conformal with the protruding fin portion of the semiconductor fin;
a first source or drain region at a first side of the gate stack; and
a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
11. The integrated circuit structure of claim 10 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon fin.
12. The integrated circuit structure of claim 10 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon germanium or germanium fin.
13. The integrated circuit structure of claim 10 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a group III-V material fin.
14. The integrated circuit structure of claim 10 , wherein the first and second source or drain regions are embedded source or drain regions.
15. The integrated circuit structure of claim 10 , wherein the first and second source or drain regions are formed in regions of the semiconductor fin at the first and second sides of the gate stack, respectively.
16. The integrated circuit structure of claim 10 , wherein the gate stack comprises a gate dielectric comprising a high-k dielectric material, and a gate electrode comprising a metal.
17. An integrated circuit structure, comprising:
a semiconductor fin having a protruding fin portion above an isolation structure above a substrate, the protruding fin portion having substantially vertical upper sidewalls and substantially vertical lower sidewalls, and the semiconductor fin further comprises a sub-fin portion on the substrate and within an opening in the isolation structure, the sub-fin portion continuous with the protruding fin portion, wherein the sub-fin portion has a width greater than a width of the protruding fin portion where the sub-fin portion meets the protruding fin portion, and the sub-fin portion has an upper horizontal surface extending laterally beyond the protruding fin portion;
a gate stack over and conformal with the protruding fin portion of the semiconductor fin;
a first source or drain region at a first side of the gate stack; and
a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
18. The integrated circuit structure of claim 17 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon fin.
19. The integrated circuit structure of claim 17 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a silicon germanium or germanium fin.
20. The integrated circuit structure of claim 17 , wherein the substrate is a monocrystalline silicon substrate, and the semiconductor fin is a group III-V material fin.
21. The integrated circuit structure of claim 17 , wherein the first and second source or drain regions are embedded source or drain regions.
22. The integrated circuit structure of claim 17 , wherein the first and second source or drain regions are formed in regions of the semiconductor fin at the first and second sides of the gate stack, respectively.
23. The integrated circuit structure of claim 17 , wherein the gate stack comprises a gate dielectric comprising a high-k dielectric material, and a gate electrode comprising a metal.