Semiconductor devices incorporating quantum dots
In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and a light-conversion device with embedded quantum dots. In some embodiments, a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, and a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color. The third light-emitting device emits light of a third color.
1. A semiconductor device, comprising:
a light-emitting structure comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device; and
a light-conversion device comprising a plurality of nanoporous structures separated by a plurality of trenches, wherein a first plurality of quantum dots is placed in a first nanoporous structure of the plurality of nanoporous structures, wherein a second plurality of quantum dots is placed in a second nanoporous structure of the plurality of nanoporous structures, wherein the first plurality of quantum dots converts light produced by the first light-emitting device into light of a first color, wherein the second plurality of quantum dots converts light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.
2. The semiconductor device of claim 1 , wherein the first plurality of quantum dots is placed in a first plurality of pores in the first nanoporous structure, and wherein the second plurality of quantum dots is placed in a second plurality of pores in the second nanoporous structure.
3. The semiconductor device of claim 2 , wherein a diameter of at least one of the first plurality of pores is not greater than 500 nm, and wherein a depth of the at least one of the first plurality of pores is not less than 1 μm.
4. The semiconductor device of claim 3 , wherein the diameter of at least one of the first plurality of pores is not less than 1 nm.
5. The semiconductor device of claim 1 , further comprising a protection structure covering surfaces of one or more of the first plurality of quantum dots and the second plurality of quantum dots, wherein the protection structure is positioned between the light-emitting structure and the plurality of nanoporous structures.
6. The semiconductor device of claim 1 , wherein each of the first light-emitting device, the second light-emitting device, and the third light-emitting device is a micro-LED.
7. The semiconductor device of claim 1 , wherein the first nanoporous structure and the second nanoporous structure are separated by a first trench, and wherein at least one sidewall of the first trench is coated with a metallic material.
8. The semiconductor device of claim 7 , wherein the second nanoporous structure and a third nanoporous structure of the plurality of nanoporous structures are separated by a second trench.
9. The semiconductor device of claim 8 , wherein no quantum dots are placed in the third nanoporous structure.
10. The semiconductor device of claim 1 , further comprising scattering media configured to cause scattering of at least a portion of light produced by the light-emitting structure.
11. The semiconductor device of claim 1 , wherein a sidewall of the semiconductor device is coated with a reflective material.
12. The semiconductor device of claim 1 , wherein the plurality of nanoporous structures is not in direct contact with the light-emitting structure.
13. The semiconductor device of claim 1 , wherein the first color is red, wherein the second color is green, and wherein the third color is blue.
14. The semiconductor device of claim 1 , wherein a thickness of the light-conversion device is equal to or greater than 10 μm.
15. The semiconductor device of claim 1 , wherein a dimension of the first light-emitting device is not greater than 50 μm.
16. The semiconductor device of claim 1 , wherein each of the first light-emitting device, the second light-emitting device, and the third light-emitting device comprises a first ohmic contact and a second ohmic contact.
17. The semiconductor device of claim 16 , wherein the light-conversion device is formed on a first side of the light-emitting structure, and wherein the first ohmic contact and the second ohmic contact are formed on a second side of the light-emitting structure.
18. The semiconductor device of claim 1 , wherein the light-conversion device is attached to the light-emitting structure.