Light emitting device and projector
A light emitting device includes: a substrate; a laminated structure that is provided on the substrate and that includes a plurality of columnar portions; and an electrode provided at an opposite side of the laminated structure from the substrate. The columnar portion includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from that of the first semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. The electrode is connected to the second semiconductor layers in the plurality of columnar portions, and includes a first electrode layer formed of a material that has a work function smaller than that of the second semiconductor layer, and a second electrode layer that is connected to the first electrode layer and that has a work function smaller than that of the first electrode layer. An interface between the first electrode layer and the second electrode layer has an uneven shape.
1. A light emitting device comprising:
a substrate;
a laminated structure that is provided on the substrate and that includes a plurality of columnar portions; and
an electrode that is provided at an opposite side of the laminated structure from the substrate,
wherein the columnar portion includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from that of the first semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer, and
the electrode is connected to the second semiconductor layers in the plurality of columnar portions, and includes:
a first electrode layer formed of a material that has a work function smaller than that of the second semiconductor layer, and
a second electrode layer that is connected to the first electrode layer and that has a work function smaller than that of the first electrode layer, and
an interface between the first electrode layer and the second electrode layer has an uneven shape that includes a plurality of peaks and valleys, and the peaks have a height of 10 nm or less.
2. The light emitting device according to claim 1 , wherein
the first electrode layer is a metal layer, and includes a first metal layer and a second metal layer, and
a work function of the first metal layer connected to the second semiconductor layer is larger than a work function of the second metal layer.
3. The light emitting device according to claim 1 , wherein
the second electrode layer is a transparent electrode layer, and
the uneven shape is provided at an interface between a second metal layer and the second electrode layer.
4. The light emitting device according to claim 1 , wherein
in the electrode,
a first metal layer is a Ni layer,
a second metal layer is an Au layer, and
the uneven shape is formed at a surface of the Au layer by plasma processing.
5. The light emitting device according to claim 1 , wherein
an uneven degree of the uneven shape is larger in a gap portion between the adjacent columnar portions than in a portion that overlaps the columnar portion.
6. A projector comprising:
the light emitting device according to claim 1 .