IP Library › Granted Patent US 11,906,780
Granted Patent B2
US 11,906,780 · App. 17/510,944 · Granted Feb 20, 2024

Asymmetric adiabatic polarization beam splitter and integrated optical waveguide filtering chip

Inventors: Hung-Pin Chung (New Taipei, TW); Kuang-Hsu Huang (Kaohsiung, TW); Tsung-Yeh Ho (Taipei, TW); I-Ting Chung (Taoyuan, TW); Yen-Hung Chen (Taoyuan, TW)
Assignee: National Central University
G02B6/126G02B5/207G02B27/283
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Quick Facts
Patent No.
US 11,906,780
App. No.
17/510,944
Granted
Feb 20, 2024
Kind
B2
Abstract

An asymmetric adiabatic polarization beam splitter integrated with a waveband filtering splitter unit and a polarization filtering splitter unit is capable of being packaged to form an integrated optical waveguide filtering chip. The waveband filtering splitter unit utilizes an adiabatic optical waveguide structure and stimulated Raman adiabatic passage on an optical waveguide to split the energy of light sources of different bands to different spaces when the light energy is performed with an adiabatic process. The polarization filtering splitter unit utilizes the two orthogonal polarization modes of an optical waveguide with birefringence to achieve a polarization-dependent mode splitting effect based on an adiabatic theory. The asymmetric adiabatic polarization beam splitter realizes the characteristics of integration and high process tolerance, and improves the mass production feasibility.

Claims (27)

1. An asymmetric adiabatic polarization beam splitter, comprising:

an optical substrate, having a first side, a second side opposite to the first side, a third side and a fourth side opposite to the third side, wherein the third side and the fourth side are adjacent to the first side and the second side, and from the first side to the second side, sequentially having a first featured region, a second featured region, a third featured region, a fourth featured region and a fifth featured region;

a first optical waveguide, a second optical waveguide and a third optical waveguide, formed on the optical substrate and extend from the first side to the second side, wherein from the third side to the fourth side, there are sequentially the first optical waveguide, the second optical waveguide and the third optical waveguide;

a band filtering structure, formed on the optical substrate, located in the second featured region and between the first optical waveguide and the second optical waveguide, used to guide a first specific band light source in the first optical waveguide into the second optical waveguide; and a polarization filtering structure, formed on the optical substrate, located in the fourth featured region and between the second optical waveguide and the third optical waveguide, used to guide a first polarization direction light source in the second optical waveguide into the third optical waveguide.

2. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the first optical waveguide, the second optical waveguide and the third optical waveguide are arranged in parallel with each other.

3. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the optical substrate is a silicon-based material substrate, a III-V material substrate, a silicon substrate, a sapphire substrate, a ceramic substrate, a quartz substrate, a lithium niobate substrate, a lithium tantalate substrate or a potassium titanyl phosphate substrate.

4. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein each of the first optical waveguide, the second optical waveguide and the third optical waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide.

5. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the first featured region is a transition buffer region before a light source of the first optical waveguide enters the second featured region, the third featured region is used to help stabilize the optical waveguide mode of the first specific band light source in the second optical waveguide, and the fifth featured region is used to make a second specific band light source of the first optical waveguide, a second polarization direction light source of the second optical waveguide and the first polarization direction light source of third optical waveguide output outside.

6. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the first optical waveguide in the second featured region has a tapered structure with a waveguide width being gradually decreased in an extending direction from the first side to the second side, and the second optical waveguide in the second featured region is a reverse tapered structure with a waveguide width being gradually increased in the extending direction from the first side to the second side.

7. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the band filtering structure is a band filtering waveguide, the band filtering waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide, and the band filtering structure gradually departs away from the second optical waveguide and gradually approaches the first optical waveguide in an extending direction from the first side to the second side.

8. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the polarization filtering structure comprises at least three polarization filtering waveguides, the polarization filtering waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide, and the polarization filtering structure gradually departs away from the third optical waveguide and gradually approaches the second optical waveguide in an extending direction from the first side to the second side.

9. The asymmetric adiabatic polarization beam splitter of claim 1 , wherein the first polarization direction light source is a polarization light source of transverse electric.

10. An integrated optical waveguide filtering chip, comprising:

an asymmetric adiabatic polarization beam splitter; and

a packaging structure, used to package the asymmetric adiabatic polarization beam splitter to form the integrated optical waveguide filtering chip, wherein the asymmetric adiabatic polarization beam splitter comprises:

an optical substrate, having a first side, a second side opposite to the first side, a third side and a fourth side opposite to the third side, wherein the third side and the fourth side are adjacent to the first side and the second side, and from the first side to the second side, sequentially having a first featured region, a second featured region, a third featured region, a fourth featured region and a fifth featured region;

a first optical waveguide, a second optical waveguide and a third optical waveguide, formed on the optical substrate and extend from the first side to the second side, wherein from the third side to the fourth side, there are sequentially the first optical waveguide, the second optical waveguide and the third optical waveguide;

a band filtering structure, formed on the optical substrate, located in the second featured region and between the first optical waveguide and the second optical waveguide, used to guide a first specific band light source in the first optical waveguide into the second optical waveguide, wherein the first specific band light source is a light source of a first specific band; and

a polarization filtering structure, formed on the optical substrate, located in the fourth featured region and between the second optical waveguide and the third optical waveguide, used to guide a first polarization direction light source in the second optical waveguide into the third optical waveguide.

11. The integrated optical waveguide filtering chip of claim 10 , wherein the first optical waveguide, the second optical waveguide and the third optical waveguide are arranged in parallel with each other.

12. The integrated optical waveguide filtering chip of claim 10 , wherein the optical substrate is a silicon-based material substrate, a III-V material substrate, a silicon substrate, a sapphire substrate, a ceramic substrate, a quartz substrate, a lithium niobate substrate, a lithium tantalate substrate or a potassium titanyl phosphate substrate.

13. The integrated optical waveguide filtering chip of claim 10 , wherein each of the first optical waveguide, the second optical waveguide and the third optical waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide.

14. The integrated optical waveguide filtering chip of claim 10 , wherein the first featured region is a transition buffer region before a light source of the first optical waveguide enters the second featured region, the third featured region is used to help stabilize the optical waveguide mode of the first specific band light source in the second optical waveguide, and the fifth featured region is used to make a second specific band light source of the first optical waveguide, a second polarization direction light source of the second optical waveguide and the first polarization direction light source of third optical waveguide output outside.

15. The integrated optical waveguide filtering chip of claim 10 , wherein the first optical waveguide in the second featured region has a tapered structure with a waveguide width being gradually decreased in an extending direction from the first side to the second side, and the second optical waveguide in the second featured region is a reverse tapered structure with a waveguide width being gradually increased in the extending direction from the first side to the second side.

16. The integrated optical waveguide filtering chip of claim 10 , wherein the band filtering structure is a band filtering waveguide, the band filtering waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide, and the band filtering structure gradually departs away from the second optical waveguide and gradually approaches the first optical waveguide in an extending direction from the first side to the second side.

17. The integrated optical waveguide filtering chip of claim 10 , wherein the polarization filtering structure comprises at least three polarization filtering waveguides, the polarization filtering waveguide is a channel waveguide, a diffused waveguide, a ridge waveguide or a buried waveguide, and the polarization filtering structure gradually departs away from the third optical waveguide and gradually approaches the second optical waveguide in an extending direction from the first side to the second side.

18. The integrated optical waveguide filtering chip of claim 10 , wherein the first polarization direction light source is a polarization light source of transverse electric.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2021
From: CHUNG, HUNG-PIN; HUANG, KUANG-HSU; HO, TSUNG-YEH; CHUNG, I-TING; CHEN, YEN-HUNG
To: NATIONAL CENTRAL UNIVERSITY
Reel/Frame 057942/0153 →
Priority Claims (1)
TW 110136210 · Sep 29, 2021 · national
Continuity (1)
Related Publication 20230096413A1 · Mar 30, 2023