Sub-miniature microphone
A microphone assembly can include a microelectromechanical systems (MEMS) transducer comprising a transducer substrate, a diaphragm oriented substantially parallel to the transducer substrate and spaced apart from the transducer substrate to form a gap, and a counter electrode coupled to the transducer substrate, the counter electrode positioned between the diaphragm and the transducer substrate. The MEMS transducer can generate a signal representative of a change in capacitance between the counter electrode and the diaphragm. A back volume of the MEMS transducer can be an enclosed volume positioned between the transducer substrate and the diaphragm. The microphone assembly can include an integrated circuit that receives the signal, wherein every point within the back volume is less than a thermal boundary layer thickness from a nearest solid surface at an upper limit of an audio frequency band that the integrated circuit is monitoring.
1. A microphone assembly comprising:
a microelectromechanical systems (MEMS) transducer, comprising
a transducer substrate,
a diaphragm oriented substantially parallel to the transducer substrate and spaced apart from the transducer substrate to form a gap, and
a counter electrode coupled to the transducer substrate, the counter electrode positioned between the diaphragm and the transducer substrate,
wherein the MEMS transducer generates a signal representative of a change in capacitance between the counter electrode and the diaphragm, and
wherein a back volume of the MEMS transducer is an enclosed volume positioned between the transducer substrate and the diaphragm; and
an integrated circuit that receives the signal, wherein every point within the back volume is a distance less than a thermal boundary layer thickness from a nearest solid surface at an upper limit of an audio frequency band that the integrated circuit is monitoring.
2. The microphone assembly of claim 1 , wherein the counter electrode is connected to an upper surface of the transducer substrate.
3. The microphone assembly of claim 1 , wherein the counter electrode is embedded within the transducer substrate.
4. The microphone assembly of claim 1 , wherein the counter electrode is polycrystalline silicon.
5. The microphone assembly of claim 1 , wherein the upper limit of the audio frequency band is 20 kHz.
6. The microphone assembly of claim 1 , wherein the enclosed volume forms the entire back volume of the MEMS transducer.
7. The microphone assembly of claim 1 , wherein the transducer substrate comprises a plurality of channels penetrating an upper surface of the transducer substrate and extending away from the diaphragm, wherein the channels are part of the back volume.
8. The microphone assembly of claim 1 , wherein the transducer substrate comprises a cavity penetrating an upper surface of the transducer substrate and extending away from the diaphragm, in which a plurality of pillars is disposed, and wherein the cavity is part of the back volume.
9. The microphone assembly of claim 1 ,
wherein the integrated circuit monitors audio frequencies up to an upper limit of audible frequencies, and
wherein every point within the back volume is a distance less than a thermal boundary layer thickness from a nearest solid surface at the upper limit of the audible frequencies.