Backside power rail integration
A method of manufacturing a semiconductor device is provided. The method includes forming a first trench partially through a first substrate from a first side of the first substrate. The method also includes widening a bottom portion of the first trench to form a lateral footing area of the first trench. The method includes forming a first metallization in the first trench; forming a second trench through a second substrate from a second side of the second substrate to expose at least a portion of first metallization in an area corresponding to the lateral footing area of the first trench, the second side being opposite to the first side. The method also includes forming a second metallization in the second trench in contact with the first metallization.
1. A semiconductor device comprising:
a first substrate;
a second substrate;
a SiGe layer provided between the first substrate and the second substrate;
a buried power rail (BPR) extending through the first substrate and the SiGe layer, a bottom portion of the BPR having portions extending laterally therefrom in the SiGe layer and having a width greater than a width of a top portion of the BPR; and
a nano though-silicon via formed in the second substrate in contact with the BPR,
wherein a width of the bottom portion of the BPR is greater than a width of the nano through-silicon via in contact therewith, and
wherein a thickness of the bottom portion of the BPR is less than a width of the top portion of the BPR.
2. The semiconductor device according to claim 1 , further comprising a dielectric liner layer formed on the walls of the BPR.
3. The semiconductor device according to claim 1 , further comprising shallow trench isolation (STI) regions formed between portions of the BPR.
4. The semiconductor device according to claim 1 , wherein the first substrate includes fins extending therefrom.
5. The semiconductor device according to claim 4 , further comprising an interlayer dielectric (ILD) layer formed on the fins of the first substrate.
6. The semiconductor device according to claim 4 , further comprising source/drain epitaxial regions formed on the fins of the first substrate.
7. The semiconductor device according to claim 1 , further comprising a contact provided on the top portion of the BPR.