Overdrive electrostatic discharge clamp

1. An electrostatic discharge clamp, comprising:

a clamping circuit, comprising a plurality of transistors connected in a cascode configuration between a power line and a system ground, wherein the number of the plurality of transistors depending on an overdriving level on the power line and manufacturing process is greater than two, the overdriving level is 2.5V or 3.3V, and the manufacture process is 5 nm, or 4 nm, or 3 nm or below;

a driving circuit, coupled to gates of the transistors of the clamping circuit;

a capacitor and resistor network, introducing an RC delay in response to an electrostatic discharge event to control the driving circuit to turn on the transistors of the clamping circuit for electrostatic discharging; and

a bias circuit, biasing the driving circuit to turn off the transistors of the clamping circuit when the capacitor and resistor network does not detect the electrostatic discharge event.

2. The electrostatic discharge clamp as claimed in claim 1 , wherein:

the capacitor and resistor network comprises a resistor and a plurality of capacitors;

the capacitors are connected in series;

a resistor-to-capacitor connection terminal between the resistor and the capacitors is coupled to a first control terminal of the driving circuit; and

in response to the electrostatic discharge event, a voltage change at the resistor-to-capacitor connection terminal is coupled to the first control terminal of the driving circuit.

3. The electrostatic discharge clamp as claimed in claim 2 , wherein:

the number of transistors is N;

the number of capacitors in the capacitor and resistor network is N;

a first capacitor-to-capacitor connection terminal to an (N−1) th capacitor-to-capacitor connection terminal connecting the N capacitors in the capacitor and resistor network in series are coupled one-to-one to a second control terminal to an N th control terminal of the driving circuit; and

the driving circuit has N output terminals coupled one-to-one to the gates of the N transistors of the clamping circuit.

4. The electrostatic discharge clamp as claimed in claim 3 , wherein:

the driving circuit comprises N inverters;

the first control terminal to the N th control terminal of the driving circuit are coupled to input terminals of the N inverters one to one;

output terminals of the N inverters are coupled to the N output terminals of the driving circuit one to one.

5. The electrostatic discharge clamp as claimed in claim 4 , wherein:

the bias circuit comprises N bias units connected in series;

a first connection terminal to an (N−1) th connection terminal connecting the N bias units in series are coupled to the first capacitor-to-capacitor connection terminal to the (N−1) th capacitor-to-capacitor connection terminal, respectively.

6. The electrostatic discharge clamp as claimed in claim 5 , wherein:

the bias circuit further comprises (N−1) resistors; and

the first connection terminal to the (N−1) th connection terminal are coupled to the first capacitor-to-capacitor connection terminal to the (N−1) th capacitor-to-capacitor connection terminal, respectively, through the (N−1) resistors.

7. The electrostatic discharge clamp as claimed in claim 5 , wherein:

the N transistors are p-channel metal oxide semiconductor field-effect transistors connected between the power line and the system ground;

the resistor in the capacitor and resistor network is connected between the resistor-to-capacitor connection terminal and the system ground;

the N inverters each have a first bias terminal and a second bias terminal;

the first control terminal of the driving circuit is coupled to an input terminal of a first inverter of the N inverters;

a second bias terminal of the first inverter is coupled to the system ground;

a first bias terminal of an N th inverter of the N inverters is coupled to the power line;

second bias terminals of a second to the N th inverter of the N inverters are coupled to output terminals of the first to an (N−1) th inverters of the N inverters, respectively; and

the first connection terminal to the (N−1) th connection terminal connecting the bias units in series from the system ground to the power line are further coupled to first bias terminals of the first to the (N−1) th inverters, respectively.

8. The electrostatic discharge clamp as claimed in claim 5 , wherein:

the N transistors are n-channel metal oxide semiconductor field-effect transistors connected between the power line and the system ground;

the resistor in the capacitor and resistor network is connected between the power line and the resistor-to-capacitor connection terminal;

the N inverters each have a first bias terminal and a second bias terminal;

the first control terminal of the driving circuit is coupled to an input terminal of a first inverter of the N inverters;

a first bias terminal of the first inverter is coupled to the power line;

a second bias terminal of an N th inverter of the N inverters is coupled to the system ground;

first bias terminals of the second to the N th inverter of the N inverters are coupled to output terminals of the first to an (N−1) th inverters of the N inverters, respectively; and

the first connection terminal to the (N−1) th connection terminal connecting the bias units in series from the power line to the system ground are further coupled to second bias terminals of the first to the (N−1) th inverters, respectively.

9. The electrostatic discharge clamp as claimed in claim 5 , wherein

each bias unit is a resistor.

10. The electrostatic discharge clamp as claimed in claim 5 , wherein

each bias unit comprises a resistor and an off-state metal oxide semiconductor field-effect transistor connected in series.

11. The electrostatic discharge clamp as claimed in claim 5 , wherein

the bias units form a diode string.

12. The electrostatic discharge clamp as claimed in claim 2 , wherein:

each capacitor in the capacitor and resistor network is a metal-oxide-semiconductor capacitor.

13. The electrostatic discharge clamp as claimed in claim 2 , wherein:

the capacitors in the capacitor and resistor network are all metal-oxide-metal capacitors or are all metal-insulator-metal capacitors.

14. The electrostatic discharge clamp as claimed in claim 2 , wherein:

the capacitors in the capacitor and resistor network are in a hybrid configuration formed by metal-oxide-semiconductor and metal-oxide-metal capacitors, or formed by metal-oxide-semiconductor and metal-insulator-metal capacitors.