Electronic display device including quantum dot filter layer for improved color purity, method for manufacturing same, and display device including the same

1. An electronic device, comprising

a first substrate,

a plurality of light emitting elements each having a horizontal length and a vertical length which arc less than or equal to about 10 micrometers, each of the plurality of light emitting elements being disposed on the first substrate,

a quantum dot color filter layer disposed on the plurality of light emitting elements, the quantum dot color filter layer comprising:

a plurality of quantum dot color filters partitioned by a plurality of first partition walls so as to be overlapped with the plurality of light emitting elements, respectively; and

a first overcoat layer between the plurality of light emitting elements and the quantum dot color filter layer; and

a light guide layer between the plurality of light emitting elements and the first overcoat layer, and

the light guide layer comprises a plurality of second partition walls overlapped with the plurality of first partition walls.

2. The electronic device of claim 1 , wherein the plurality of quantum dot color filters comprises a first quantum dot color filter comprising quantum dots which convert third light into first light, and a second quantum dot color filter comprising quantum dots which convert third light into second light.

3. The electronic device of claim 1 , wherein the quantum dot color filter layer further comprises a transmission layer which does not comprise the quantum dot color filter.

4. The electronic device of claim 1 , wherein a space partitioned by the plurality of second partition walls in the light guide layer is defined as an empty space or is filled with a gas, an organic material, an inorganic material, or an auxiliary color filter.

5. The electronic device of claim 1 , further comprising: a thin film encapsulation layer between the quantum dot color filter layer and the first overcoat layer, or between the first overcoat layer and the light guide layer.

6. The electronic device of claim 5 , wherein the thin film encapsulation layer has a thickness of about 50 nanometers to about 1000 nanometers.

7. The electronic device of claim 5 , wherein a surface of the thin film encapsulation layer facing the quantum dot color filter layer has a concavo-convex structure.

8. The electronic device of claim 5 , wherein the thin film encapsulation layer comprises a metal oxide, a metal nitride, a metal oxynitride, or a combination thereof.

9. The electronic device of claim 5 , further comprising: a heat dissipation layer or a Bragg reflector between the thin film encapsulation layer and the quantum dot color filter layer, and/or between the thin film encapsulation layer and the plurality of light emitting elements.

10. The electronic device of claim 1 , wherein each of the plurality of light emitting elements comprises a first conductivity-type semiconductor layer on the first substrate, a second conductivity-type semiconductor layer overlapped with the first conductivity-type semiconductor layer, and an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.

11. The electronic device of claim 1 , wherein the light guide layer is provided in plural such that two or more light guide layers are stacked apart from each other at a predetermined distance.

12. The electronic device of claim 1 , wherein the quantum dot color filter layer is provided in plural such that two or more quantum dot color filter layers are stacked apart from each other at a predetermined distance.

13. A display device comprising the electronic device of claim 1 .