PD alloy, PD alloy material and probe pin for electric and electronic devices, and methods for manufacturing the same
An object of the present invention is to provide a Pd alloy, a Pd alloy material, and a probe pin for electric and electronic devices in which specific resistance, hardness, and processability are balanced at a higher level than before, and methods for manufacturing the same. In order to achieve this object, the Pd alloy for electric and electronic devices according to the present invention having a composition comprising 50.1 mass % or more and 55.5 mass % or less of Pd, 6.3 mass % or more and 16.1 mass % or less of Ag, 30.0 mass % or more and 38.0 mass % or less of Cu, and 0.5 mass % or more and 2.0 mass % or less of In is adopted.
1. A Pd alloy for electric and electronic devices containing Pd as a main component, wherein the Pd alloy for electric and electronic devices has a composition consisting of:
50.1 mass % or more and 55.5 mass % or less of Pd,
6.3 mass % or more and 16.1 mass % or less of Ag,
30.0 mass % or more and 38.0 mass % or less of Cu, and
0.5 mass % or more and 2.0 mass % or less of In,
with the balance being unavoidable impurities.
2. A Pd alloy material for electric and electronic devices, wherein the Pd alloy for electric and electronic devices according to claim 1 is made into a plate or wire shape.
3. A probe pin obtained by using the Pd alloy material for electric and electronic devices according to claim 2 .
4. The probe pin according to claim 3 , wherein a Vickers hardness is 300 HV or more and 480 HV or less.
5. The probe pin according to claim 4 , wherein a specific resistance is 6.0 μΩ·cm or more and 8.0 μΩ·cm or less.
6. The probe pin according to claim 3 , wherein a specific resistance is 6.0 μΩ·cm or more and 8.0 μΩ·cm or less.
7. A method for manufacturing a Pd alloy material for electric and electronic devices, the method comprising processing a Pd alloy for electric and electronic devices having a composition consisting of:
50.1 mass % or more and 55.5 mass % or less of Pd,
6.3 mass % or more and 16.1 mass % or less of Ag,
30.0 mass % or more and 38.0 mass % or less of Cu, and
0.5 mass % or more and 2.0 mass % or less of In,
with the balance being unavoidable impurities
into a plate or wire shape during plastic processing so that a cross-sectional reduction rate becomes 50% or more and 95% or less in the final plastic processing.
8. A method for manufacturing a probe pin using a Pd alloy for electric and electronic devices, the method comprising providing a probe pin shape using a Pd alloy material for electric and electronic devices that has been processed into a wire shape so that a cross-sectional reduction rate becomes 50% or more and 95% or less in the final plastic processing during plastic processing a Pd alloy for electric and electronic devices having a composition consisting of:
50.0 mass % or more and 55.5 mass % or less of Pd,
6.3 mass % or more and 16.1 mass % or less of Ag,
30.0 mass % or more and 38.0 mass % or less of Cu, and
0.5 mass % or more and 2.0 mass % or less of In,
with the balance being unavoidable impurities;
heat-treating the probe pin shape at a temperature of 350° C. or more and 550° C. or less to adjust a Vickers hardness to 300 HV or more and 480 HV or less and a specific resistance to 6.0 μΩ·cm or more and 8.0 μΩ·cm or less.