Method and system for reticle enhancement technology

1. A method for reticle enhancement technology (RET) for transferring a pattern to a substrate, the method comprising:

inputting a mask exposure information, the mask exposure information comprising information to expose the pattern on the substrate;

calculating a mask 2D (M2D) effect from the mask exposure information;

using a neural network to determine a mask 3D (M3D) effect from the M2D effect, wherein determining the M3D effect includes determining a variable side wall angle (VSA);

calculating a calculated pattern on the substrate using the M3D effect; and

modifying the mask exposure information based on the calculated pattern on the substrate.

2. The method of claim 1 , wherein the calculating the calculated pattern on the substrate includes lithography simulation.

3. The method of claim 1 , wherein the calculating the M2D effect comprises inverse lithography technology (ILT).

4. The method of claim 1 , further comprising:

inputting a target substrate pattern; and

calculating the mask exposure information from the target substrate pattern using reticle enhancement technology (RET) prior to inputting the mask exposure information.

5. The method of claim 4 , wherein the RET comprises inverse lithography technology (ILT).

6. The method of claim 1 , wherein the mask exposure information further comprises optical proximity correction (OPC).

7. The method of claim 1 , wherein the calculating of the calculated pattern on the substrate comprises extreme ultraviolet (EUV) simulation.

8. The method of claim 1 , wherein the determining the M3D effect includes calculating a dose margin from the mask exposure information.

9. The method of claim 1 , wherein determining the M3D effect uses a transfer function.

10. The method of claim 1 , wherein the mask exposure information is for multi-beam.

11. The method of claim 1 , further comprising iterating the calculating the M2D effect, the determining the M3D effect, the calculating the calculated pattern and the modifying.

12. A method for calculating a pattern to be formed on a substrate using optical lithography with a mask, the method comprising:

inputting a mask exposure information that will form the pattern on the mask;

determining a dose margin from the mask exposure information;

calculating a variable side wall angle (VSA) using the dose margin; and

calculating the pattern on the substrate using the VSA, wherein the calculating the pattern on the substrate includes a mask 3D (M3D) effect;

wherein the variable side wall angle is calculated using a neural network.

13. The method of claim 12 , wherein the calculating the pattern on the substrate comprises lithography simulation.

14. The method of claim 12 , wherein the calculating the pattern on the substrate comprises extreme ultraviolet (EUV) simulation.

15. The method of claim 12 , wherein the pattern on the substrate is for a semiconductor device.

16. The method of claim 12 , further comprising calculating the mask from the mask exposure information, and wherein the calculating the pattern on the substrate uses the mask.

17. A system for reticle enhancement technology (RET) comprising:

a device configured to receive a mask exposure information, the mask exposure information comprising information to expose a pattern on a substrate;

a device configured to calculate a mask 2D (M2D) effect from the mask exposure information;

a device configured to use a neural network to determine a mask 3D (M3D) effect from the M2D effect, wherein determining the M3D effect includes determining a variable side wall angle (VSA); and

a device configured to calculate a calculated pattern on the substrate using the M3D effect.

18. The system of claim 17 , wherein the device configured to calculate the M2D effect and the device configured to use the neural network to determine the M3D effect from the M2D effect comprises a graphics processing unit (GPU).