Via CD controllable top via structure
A method of via formation including forming a sacrificial mask over a conductive layer, forming a plurality of pillars in the sacrificial mask and the conductive layer, wherein each pillar of the plurality of pillars includes a sacrificial cap and a first conductive via, depositing a spacer between the plurality of pillars, masking at least one of the sacrificial caps, removing at least one of the sacrificial caps to create openings, forming second conductive vias in the openings, and depositing a dielectric coplanar to a top surface of the second conductive vias.
1. A method of via formation comprising:
forming a sacrificial mask over a conductive layer;
forming a plurality of pillars in the sacrificial mask and the conductive layer, wherein each pillar of the plurality of pillars includes a sacrificial cap and a first conductive via;
depositing a spacer between the plurality of pillars;
masking at least one of the sacrificial caps;
removing at least one of the sacrificial caps to create openings;
forming second conductive vias in the openings; and
depositing a dielectric coplanar to a top surface of the second conductive vias.
2. The of claim 1 , wherein the conductive layer s ruthenium (Ru).
3. The method of claim 1 , wherein the sacrificial cap of each pillar of the plurality of pillars is tapered.
4. The method of claim 1 , wherein a top portion of the second conductive vias defines a trapezoidal shape.
5. The method of claim 1 , wherein a top portion of second conductive vias defines a rectangular shape.
6. The method of claim 1 , wherein a top portion of the second conductive vias defines a conical shape.
7. The method of claim 1 , wherein a top portion of the second conductive vias defines a T-shaped configuration.
8. The method of claim 7 , wherein the T-shaped configuration defines a first segment and a second segment, the first segment being rectangular and the second segment being conical.
9. The method of claim 1 , wherein the second conductive vias are Ru vias.
10. The method of claim 1 , wherein the dielectric includes a liquid flowable chemical vapor deposition (fCVD).