Semiconductor image sensor having reflection component and method of making
A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.
1. A semiconductor image sensor comprising:
a pixel, wherein the pixel comprises:
a first substrate; and
a photodiode in the first substrate;
an interconnect structure electrically connected to the pixel; and
a reflection structure between the interconnect structure and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode, and the interconnect structure comprises a conductive element extending through the reflection structure to electrically connect to the photodiode.
2. The semiconductor image sensor of claim 1 , wherein the reflection structure comprises an air gap.
3. The semiconductor image sensor of claim 1 , wherein the reflection structure comprises alternating layers of high and low refractive index.
4. The semiconductor image sensor of claim 3 , wherein the alternating layers of high and low refractive index comprise:
a first silicon nitride layer having a first N/Si ratio, and
a second silicon nitride layer having a second N/Si ratio, wherein the first N/Si ratio is different form the second N/Si ratio.
5. The semiconductor image sensor of claim 4 , wherein the first silicon nitride layer is between the second silicon nitride layer and the interconnect structure.
6. The semiconductor image sensor of claim 1 , further comprising a transistor electrically connected to the photodiode by the interconnect structure.
7. The semiconductor image sensor of claim 6 , wherein the transistor is on an opposite side of the interconnect structure from the photodiode.
8. The semiconductor image sensor of claim 6 , wherein the transistor is on a same side of the interconnect structure as the photodiode.
9. The semiconductor image sensor of claim 1 , wherein the interconnect structure defines a plurality of trenches in fluid contact with the reflection structure.
10. The semiconductor image sensor of claim 1 , wherein the conductive element extends through an entirety of the reflection structure.
11. The semiconductor image sensor of claim 1 , wherein the pixel further comprises a transfer gate for selectively electrically connecting the photodiode to a highly doped region in the first substrate.
12. The semiconductor image sensor of claim 11 , wherein the transfer gate is in the reflection structure.
13. A semiconductor image sensor comprising:
a pixel array, wherein the pixel array comprises:
a first pixel configured to detect green light; and
a second pixel configured to detect light other than green light;
an interconnect structure electrically connected to each of the first pixel and the second pixel; and
a first reflection structure between the interconnect structure and the first pixel, wherein the first reflection structure is configured to reflect light pass through the first pixel back toward the first pixel, a space between the interconnect structure and the second pixel is free of the first reflection structure, and the interconnect structure comprises a conductive element extending through the reflection structure to electrically connect to the photodiode.
14. The semiconductor image sensor of claim 13 , further comprising a second reflection structure, wherein the pixel array further comprises a third pixel configured to detect light other than green light, the second reflection structure is configured to reflect light pass through the third pixel back toward the third pixel.
15. The semiconductor image sensor of claim 14 , wherein the third pixel is closer to an edge of the pixel array than the second pixel.
16. The semiconductor image sensor of claim 14 , wherein the third pixel is configured to detect a same color light as the second pixel.
17. The semiconductor image sensor of claim 13 , further comprising a transistor electrically connected to the first pixel by the interconnect structure.
18. The semiconductor image sensor of claim 17 , wherein the transistor is on an opposite side of the interconnect structure from the first pixel.
19. The semiconductor image sensor of claim 17 , wherein the transistor is on a same side of the interconnect structure as the first pixel.