IP Library › Granted Patent US 11,923,707
Granted Patent B2
US 11,923,707 · App. 17/293,215 · Granted Mar 5, 2024

Battery protection circuit, power storage device, and electric device

Inventors: Shunpei Yamazaki (Tokyo, JP); Takayuki Ikeda (Kanagawa, JP); Munehiro Kozuma (Kanagawa, JP); Takanori Matsuzaki (Kanagawa, JP); Akio Suzuki (Kanagawa, JP); Seiya Saito (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H02J7/0029H02J7/00712
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Quick Facts
Patent No.
US 11,923,707
App. No.
17/293,215
Granted
Mar 5, 2024
Kind
B2
Abstract

A battery protection circuit with a novel configuration and a power storage device including the battery protection circuit are provided. The battery protection circuit includes a switch circuit for controlling charge and discharge of a battery cell; the switch circuit includes a mechanical relay, a first transistor, and a second transistor; the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal; the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal; the first transistor has a function of supplying first current between the first terminal and the second terminal; the second transistor has a function of supplying second current between the first terminal and the second terminal; and the first current is higher than the second current.

Claims (85)

1. A battery protection circuit comprising a switch circuit for controlling charge and discharge of a battery cell,

wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal,

wherein the first transistor has a function of supplying first current between the first terminal and the second terminal,

wherein the second transistor has a function of supplying second current between the first terminal and the second terminal, and

wherein the first current is higher than the second current.

2. The battery protection circuit according to claim 1 ,

wherein the first current is on-state current flowing between a source and a drain of the first transistor and the second current is on-state current flowing between a source and a drain of the second transistor.

3. The battery protection circuit according to claim 2 ,

wherein first off-state current flowing between the source and the drain of the first transistor during off operation thereof is higher than second off-state current flowing between the source and the drain of the second transistor during off operation thereof.

4. A battery protection circuit comprising a switch circuit for controlling charge and discharge of a battery cell,

wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal,

wherein the first transistor has a function of supplying first current between the first terminal and the second terminal,

wherein in the first transistor, a semiconductor layer comprising a channel formation region is formed of silicon,

wherein the second transistor has a function of supplying second current between the first terminal and the second terminal,

wherein in the second transistor, a semiconductor layer comprising a channel formation region is formed of an oxide semiconductor, and

wherein the first current is higher than the second current.

5. The battery protection circuit according to claim 4 ,

wherein the first current is on-state current flowing between a source and a drain of the first transistor and the second current is on-state current flowing between a source and a drain of the second transistor.

6. The battery protection circuit according to claim 5 ,

wherein first off-state current flowing between the source and the drain of the first transistor during off operation thereof is higher than second off-state current flowing between the source and the drain of the second transistor during off operation thereof.

7. A battery protection circuit comprising a switch circuit for controlling charge and discharge of a battery cell,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the switch circuit comprises a first transistor,

wherein the first transistor comprises a back gate electrode,

wherein the first transistor is capable of switching first current and second current flowing between the first terminal and the second terminal during on operation, by control of voltage applied to the back gate electrode, and

wherein the first current is higher than the second current.

8. A power storage device comprising:

a battery cell; and

a switch circuit for controlling charge and discharge of the battery cell,

wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal,

wherein the first transistor has a function of supplying first current between the first terminal and the second terminal,

wherein the second transistor has a function of supplying second current between the first terminal and the second terminal, and

wherein the first current is higher than the second current.

9. The power storage device according to claim 8 ,

wherein the first current is on-state current flowing between a source and a drain of the first transistor and the second current is on-state current flowing between a source and a drain of the second transistor.

10. The power storage device according to claim 9 ,

wherein first off-state current flowing between the source and the drain of the first transistor during off operation thereof is higher than second off-state current flowing between the source and the drain of the second transistor during off operation thereof.

11. The power storage device according to claim 8 , further comprising:

a battery protection circuit for controlling the switch circuit; and

a charge control circuit for switching a charge mode of the battery cell,

wherein the first transistor has a function of controlling the amount of current flowing between the first terminal and the second terminal, and

wherein the battery protection circuit controls the amount of the current in accordance with a signal of the charge control circuit.

12. The power storage device according to claim 11 ,

wherein the battery protection circuit has a function of controlling the amount of the current such that the charge mode is switched from a constant current charge mode to a constant voltage charge mode.

13. The power storage device according to claim 8 ,

wherein the first transistor comprises an oxide semiconductor in a channel formation region.

14. An electric device comprising:

the power storage device according to claim 6 ; and

a housing.

15. A power storage device comprising:

a battery cell; and

a switch circuit for controlling charge and discharge of the battery cell,

wherein the switch circuit comprises a mechanical relay, a first transistor, and a second transistor,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal,

wherein the first transistor has a function of supplying first current between the first terminal and the second terminal,

wherein in the first transistor, a semiconductor layer comprising a channel formation region is formed of silicon,

wherein the second transistor has a function of supplying second current between the first terminal and the second terminal,

wherein in the second transistor, a semiconductor layer comprising a channel formation region is formed of an oxide semiconductor, and

wherein the first current is higher than the second current.

16. The power storage device according to claim 15 ,

wherein the first current is on-state current flowing between a source and a drain of the first transistor and the second current is on-state current flowing between a source and a drain of the second transistor.

17. The power storage device according to claim 16 ,

wherein first off-state current flowing between the source and the drain of the first transistor during off operation thereof is higher than second off-state current flowing between the source and the drain of the second transistor during off operation thereof.

18. The power storage device according to claim 15 , further comprising:

a battery protection circuit for controlling the switch circuit; and

a charge control circuit for switching a charge mode of the battery cell,

wherein the first transistor has a function of controlling the amount of current flowing between the first terminal and the second terminal, and

wherein the battery protection circuit controls the amount of the current in accordance with a signal of the charge control circuit.

19. The power storage device according to claim 18 ,

wherein the battery protection circuit has a function of controlling the amount of the current such that the charge mode is switched from a constant current charge mode to a constant voltage charge mode.

20. A power storage device comprising:

a battery cell; and

a switch circuit for controlling charge and discharge of the battery cell,

wherein the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal,

wherein the switch circuit comprises a first transistor,

wherein the first transistor comprises a back gate electrode,

wherein the first transistor is capable of switching first current and second current flowing between the first terminal and the second terminal during on operation, by control of voltage applied to the back gate electrode, and

wherein the first current is higher than the second current.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2021
From: YAMAZAKI, SHUNPEI; IKEDA, TAKAYUKI; KOZUMA, MUNEHIRO; MATSUZAKI, TAKANORI; SUZUKI, AKIO; SAITO, SEIYA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 056215/0743 →
Priority Claims (3)
JP 2018-215129 · Nov 16, 2018 · national
JP 2018-224703 · Nov 30, 2018 · national
JP 2018-239482 · Dec 21, 2018 · national
Continuity (1)
Related Publication 20220052535A1 · Feb 17, 2022