Read disturb information determination system
A read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device reads, from a first row in a storage subsystem in the storage device, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data. The storage device uses the error correction information to identify a number of the bits that store portions of the data with errors and, based on the number of bits that store portions of the data with errors, determines read disturb information for the first row in the storage subsystem in the storage device. The storage device then uses the read disturb information to generate a read temperature for a second row in the storage subsystem in the storage device, and provides the read temperature to the global read temperature identification system.
1. A read disturb information determination system, comprising:
a global read temperature identification subsystem; and
a storage device that is coupled to the global read temperature identification system and configured to:
read, from a first row in a storage subsystem in the storage device, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data;
identify, using the error correction information, a number of the bits that store portions of the data with errors;
determine, for the first row in the storage subsystem in the storage device based on the number of bits that store portions of the data with errors, read disturb information;
generate, using the read disturb information, a read temperature for a second row in the storage subsystem in the storage device; and
provide the read temperature to the global read temperature identification system.
2. The system of claim 1 , wherein the bits that were previously identified as being susceptible to read disturb effects are each included in the same page.
3. The system of claim 1 , wherein the storage device is configured to:
discard, subsequent to identifying the number of the bits that store portions of the data with errors, the data.
4. The system of claim 1 , wherein the determining the read disturb information for the first row in the storage subsystem in the storage device based on the number of bits that store portions of the data with errors includes generating the read disturb information as the sum of the number of bits that store portions of the data with errors.
5. The system of claim 1 , wherein the number of the bits that store portions of the data with errors is identified using the error correction information with at least one default value voltage reference level.
6. The system of claim 1 , wherein the data read from the first row in the storage subsystem in the storage device includes all of the data in the first row in the storage subsystem in the storage device.
7. The system of claim 1 , wherein the identifying the number of the bits that store portions of the data with errors includes identifying the number of the bits that store portions of the data with correctable errors that may be corrected using the error correction information.
8. A storage device, comprising:
a processing system; and
a memory system that is coupled to the processing system and that includes instructions that, when executed by the processing system, cause the processing system to provide a read disturb information determination engine that is configured to:
read, from a first row in a storage subsystem, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data;
identify, using the error correction information, a number of the bits that store portions of the data with errors; and
determine, for the first row in the storage subsystem based on the number of bits that store portions of the data with errors, read disturb information; and
generate, using the read disturb information, a read temperature for a second row in the storage subsystem.
9. The storage device of claim 8 , wherein the bits that were previously identified as being susceptible to read disturb effects are each included in the same page.
10. The storage device of claim 8 , wherein the read disturb information determination engine is configured to:
discard, subsequent to identifying the number of the bits that store portions of the data with errors, the data.
11. The storage device of claim 8 , wherein the determining the read disturb information for the first row in the storage subsystem based on the number of bits that store portions of the data with errors includes generating the read disturb information as the sum of the number of bits that store portions of the data with errors.
12. The storage device of claim 8 , wherein the number of the bits that store portions of the data with errors is identified using the error correction information with at least one default value voltage reference level.
13. The storage device of claim 8 , wherein the identifying the number of the bits that store portions of the data with errors includes identifying the number of the bits that store portions of the data with correctable errors that may be corrected using the error correction information.
14. A method for determining read disturb information, comprising:
reading, by a storage device from a first row in a storage subsystem included in the storage device, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data;
identifying, by the storage device using the error correction information, a number of the bits that store portions of the data with errors; and
determining, by the storage device for the first row in the storage subsystem included in the storage device based on the number of bits that store portions of the data with errors, read disturb information; and
generating, by the storage device using the read disturb information, a read temperature for a second row in the storage subsystem included in the storage device.
15. The method of claim 14 , wherein the bits that were previously identified as being susceptible to read disturb effects are each included in the same page.
16. The method of claim 14 , further comprising:
discarding, by the storage device subsequent to identifying the number of the bits that store portions of the data with errors, the data.
17. The method of claim 14 , wherein the determining the read disturb information for the first row in the storage subsystem included in the storage device based on the number of bits that store portions of the data with errors includes generating the read disturb information as the sum of the number of bits that store portions of the data with errors.
18. The method of claim 14 , wherein the number of the bits that store portions of the data with errors is identified using the error correction information with at least one default value voltage reference level.
19. The method of claim 14 , wherein the data read from the first row in the storage subsystem in the storage device includes all of the data in the first row in the storage subsystem in the storage device.
20. The method of claim 14 , wherein the identifying the number of the bits that store portions of the data with errors includes identifying the number of the bits that store portions of the data with correctable errors that may be corrected using the error correction information.