Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.
1. A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a first insulator over the second oxide;
a first conductor over the first insulator; and
a second conductor and a third conductor over the second oxide,
wherein the second conductor comprises a first region and a second region,
wherein the third conductor comprises a third region and a fourth region,
wherein the second region is positioned above the first region,
wherein the fourth region is positioned above the third region,
wherein each of the second conductor and the third conductor comprises tantalum and nitrogen,
wherein an atomic ratio of nitrogen to tantalum in the first region is higher than an atomic ratio of nitrogen to tantalum in the second region,
wherein an atomic ratio of nitrogen to tantalum in the third region is higher than an atomic ratio of nitrogen to tantalum in the fourth region,
wherein the second conductor further comprises a fifth region,
wherein the third conductor further comprises a sixth region,
wherein the fifth region is positioned above the second region,
wherein the sixth region is positioned above the fourth region,
wherein an atomic ratio of nitrogen to tantalum in the fifth region is higher than the atomic ratio of nitrogen to tantalum in the second region, and
wherein an atomic ratio of nitrogen to tantalum in the sixth region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.
2. The semiconductor device according to claim 1 ,
wherein a second insulator is provided over the second conductor and the third conductor.
3. The semiconductor device according to claim 1 ,
wherein the first oxide comprises indium, an element M, and zinc, and
wherein M is aluminum, gallium, yttrium, or tin.
4. A semiconductor device comprising:
a first oxide;
a first insulator over the first oxide;
a first conductor over the first insulator; and
a second conductor and a third conductor over the first oxide,
wherein the second conductor comprises a first region and a second region,
wherein the third conductor comprises a third region and a fourth region,
wherein the second region is positioned above the first region,
wherein the fourth region is positioned above the third region,
wherein each of the second conductor and the third conductor comprises tantalum and nitrogen,
wherein an atomic ratio of nitrogen to tantalum in the first region is higher than an atomic ratio of nitrogen to tantalum in the second region,
wherein an atomic ratio of nitrogen to tantalum in the third region is higher than an atomic ratio of nitrogen to tantalum in the fourth region,
wherein the second conductor further comprises a fifth region,
wherein the third conductor further comprises a sixth region,
wherein the fifth region is positioned above the second region,
wherein the sixth region is positioned above the fourth region,
wherein an atomic ratio of nitrogen to tantalum in the fifth region is higher than the atomic ratio of nitrogen to tantalum in the second region, and
wherein an atomic ratio of nitrogen to tantalum in the sixth region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.