IP Library › Granted Patent US 11,932,931
Granted Patent B2
US 11,932,931 · App. 17/706,130 · Granted Mar 19, 2024

Hydrophilic metal thin film and sputtering method for depositing the same

Inventors: Pak-Man Yiu (New Taipei, TW); Jhen-De You (Taoyuan, TW); Jinn Chu (Taipei, TW); Sung-Tsun Wang (Chiayi County, TW)
Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
C23C14/165C22C38/002C22C38/44C22C38/58C23C14/3407C23C14/35
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Quick Facts
Patent No.
US 11,932,931
App. No.
17/706,130
Granted
Mar 19, 2024
Kind
B2
Abstract

The present invention relates to a hydrophilic metal thin film, which is formed by stacking a plurality of columnar structures. A plurality of tetrahedral structures is on the surface of the hydrophilic metal film, which is formed on the top of the columnar structures. The width of the tetrahedral structures is 15 nm to 120 nm. The hydrophilic metal thin film comprises: 35 to 95 at % of iron, 5 to 20 at % of chromium. The above-mentioned hydrophilic metal thin film is formed by magnetron sputtering method under the working pressure of argon gas ranging from 6 mTorr to 13 mTorr, and the sputtering time exceeds 20 minutes.

Claims (8)

1. A method for forming a hydrophilic metal film, comprising:

providing a substrate;

providing a sputtering target made of 316 stainless steel; and

sputtering the sputtering target onto the substrate using a magnetron sputtering method under a vacuum level of 1×10 −3 mTorr, with an argon working pressure at 12 mTorr, and a sputtering time exceeding 20 minutes to obtain the hydrophilic metal film depositing on the substrate;

wherein a surface of the hydrophilic metal film is covered with nano-tetrahedral tapered structures.

2. The method of claim 1 , wherein the magnetron sputtering method is direct current (DC) magnetron sputtering with a DC electric power of 100 W.

3. The method of claim 1 , wherein the magnetron sputtering method is radio frequency (RF) magnetron sputtering with an RF electric power of 100 W.

4. The method of claim 1 , wherein the magnetron sputtering method is direct current (DC) magnetron sputtering with a DC electric power of 100 W, followed by radio frequency (RF) magnetron sputtering with an RF electric power of 100 W.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2024
From: YIU, PAK-MAN; YOU, JHEN-DE; CHU, JINN; WANG, SUNG-TSUN
To: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Reel/Frame 066187/0979 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2022
From: YIU, PAK-MAN; YOU, JHEN-DE; CHU, JINN
To: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Reel/Frame 059415/0827 →
Continuity (1)
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