Corrosion resistant film on a chamber component and methods of depositing thereof
Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
1. A method for depositing a corrosion resistant film on a metal surface of a chamber component in a deposition chamber, the method comprising:
performing three or more consecutive pulse-purge reduction sequences to reduce a base metal oxide on the metal surface of the chamber component, wherein a purge cycle of the three or more consecutive pulse-purge reduction sequences removes at least excess reagent out of the deposition chamber; and
thereafter, performing at least one atomic layer deposition (ALD) cycle to form the corrosion resistant film onto the reduced metal surface.
2. The method of claim 1 , wherein an ALD cycle from the at least one ALD cycle comprises:
forming an adsorption layer of a metal containing species onto the metal surface of the chamber component by injecting a metal-containing precursor into the deposition chamber containing the chamber component; and
reacting an alcohol reactant with the adsorption layer to form a metal oxide layer by injecting the alcohol reactant into the deposition chamber.
3. The method of claim 2 , wherein the metal-containing precursor comprises at least one of triethylaluminum, diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triisobutylaluminum, trimethylaluminum, or tris(diethylamido)aluminum, tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato), zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), or tetrakis(ethylmethylamido)zirconium (IV), HfCl 4 , TEMAHf, TDMAHf, HfCp variants, ZrCp variants, or a mixture thereof.
4. The method of claim 2 , wherein the alcohol reactant comprises at least one of tert-butanol, 3-methyl-t-butanol, or a mixture thereof.
5. The method of claim 1 , wherein the metal surface comprises about 10 wt % or less base metal oxide after the three or more consecutive pulse-purge reduction sequences.
6. The method of claim 1 , wherein a sequence from the three or more consecutive pulse-purge reduction sequences comprises:
pulsing an alcohol reductant into the deposition chamber containing the chamber component to reduce the base metal oxide on the metal surface of the chamber component.
7. The method of claim 6 , wherein the alcohol reductant comprises at least one of isopropanol, tert-butanol, or a mixture thereof.
8. The method of claim 6 , wherein the three or more consecutive pulse-purge reduction sequences consume about 0.004 g/s-m 2 to about 0.012 g/s-m 2 of the alcohol reductant per second and per area of the metal surface.
9. The method of claim 1 , wherein the metal surface comprises at least one of nickel, copper, cobalt, chromium, stainless steel, molybdenum, ruthenium, tungsten, or platinum.
10. The method of claim 1 , wherein the base metal oxide comprises at least one of nickel oxide or nickel hydroxide, copper oxide, copper hydroxide, cobalt oxide, cobalt hydroxide, chromium oxide, chromium hydroxide, molybdenum oxide, molybdenum hydroxide, ruthenium oxide, ruthenium hydroxide, tungsten oxide, tungsten hydroxide, platinum oxide, platinum hydroxide, or a mixture thereof.
11. The method of claim 1 , wherein performing the at least one ALD cycle comprises performing a metal containing-precursor injection operation prior to any other operation of the ALD cycle.
12. A method for depositing a corrosion resistant film on a nickel surface of a chamber component in a deposition chamber, the method comprising:
performing three or more consecutive pulse-purge reduction sequences to reduce a nickel oxide and/or a nickel hydroxide on the nickel surface of the chamber component, wherein a purge cycle of the three or more consecutive pulse-purge reduction sequences removes at least excess reagent out of the deposition chamber; and
performing at least one dry atomic layer deposition (ALD) cycle to form the corrosion resistant film on the reduced nickel surface.