Non-silicon N-type and P-type stacked transistors for integrated circuit devices
Multiple non-silicon semiconductor material layers may be stacked within a fin structure. The multiple non-silicon semiconductor material layers may include one or more layers that are suitable for P-type transistors. The multiple non-silicon semiconductor material layers may further include one or more one or more layers that are suited for N-type transistors. The multiple non-silicon semiconductor material layers may further include one or more intervening layers separating the N-type from the P-type layers. The intervening layers may be at least partially sacrificial, for example to allow one or more of a gate, source, or drain to wrap completely around a channel region of one or more of the N-type and P-type transistors.
1. An integrated circuit (IC) structure, comprising:
a material stack including a first channel material and a second channel material, wherein the first channel material comprises Ge and the second channel material comprises one or more Group III elements and one or more Group V elements;
one or more gate electrodes adjacent to a sidewall of the first and second channel materials; and
source and drain terminals coupled to the first and second channel materials.
2. The IC structure of claim 1 , wherein the source and drain terminals comprise:
a first source and a first drain coupled to the first channel material, wherein the first source and the first drain comprise acceptor impurities; and
a second source and a second drain coupled to the second channel material, wherein the second source and the second drain comprise donor impurities.
3. The IC structure of claim 1 , wherein a portion of the gate electrodes is between the first and second channel materials.
4. The IC structure of claim 1 , wherein the material stack is over a crystalline substrate material; and
a portion of the gate electrode is between the material stack and the crystalline substrate material.
5. The IC structure of claim 4 , wherein the crystalline substrate material is within a trench that extends through a dielectric material.
6. The IC structure of claim 4 , wherein the crystalline substrate material comprises Ge or one or more Group III elements and one or more Group V elements.
7. The IC structure of claim 1 , wherein the second channel material comprises Ga.
8. The IC structure of claim 7 , wherein the second channel material comprises In, Ga and As.
9. The IC structure of claim 8 , wherein In content is between 0.2 and 0.4.
10. The IC structure of claim 1 , wherein the second channel material is over the first channel material.
11. An integrated circuit (IC) device, comprising:
processor circuitry; and
memory circuitry coupled to the processor circuitry, wherein the processor circuitry comprises a first transistor stacked with a second transistor, and wherein:
the first transistor comprises a first channel material comprising Ge;
the second transistor comprises a second channel material comprising one or more Group III elements and one or more Group V elements; and
one or more gate electrodes adjacent to a sidewall of the first and second channel materials.
12. The IC device of claim 11 , wherein the second channel material comprises Ga, and the second channel material is over the first channel material.
13. The IC device of claim 12 , wherein the second channel material comprises In, Ga and As.
14. The IC device of claim 13 , wherein In content is between 0.2 and 0.4.
15. The IC device of claim 12 , further comprising:
a first source and a first drain coupled to the first channel material, wherein the first source and the first drain comprise acceptor impurities; and
a second source and a second drain coupled to the second channel material, wherein the second source and the second drain comprise donor impurities.
16. The IC device of claim 12 , wherein:
a portion of the one or more gate electrodes is between the first and second channel materials;
the first and second channel materials are over a crystalline substrate material; and
a portion of the one or more gate electrodes is between the first and second channel materials and the crystalline substrate material.
17. A method of fabricating an integrated circuit (IC) device structure, the method comprising:
forming a material stack comprising a first material layer comprising Ge, and a material second layer comprising one or more Group III elements and one or more Group V elements;
forming a gate electrode adjacent to the first material layer and the second material layer;
forming a first source and a first drain on opposite sides of the gate electrode and coupled with the first material layer; and
forming a second source and a second drain on opposite sides of the gate electrode and coupled with the second material layer.
18. The method of claim 17 , wherein:
forming material stack comprises forming the second material layer over the first material layer; and
forming the second material layer comprises epitaxially growing a layer comprising Ga.
19. The method of claim 18 , wherein:
forming the material stack further comprises forming a third material layer between the first and second material layers; and
forming the gate electrode further comprises replacing a portion of the third material layer with a portion of the gate electrode.
20. The method of claim 17 , wherein forming the first material layer further comprises epitaxially growing substantially pure Ge.