Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof

1. A memcapacitor comprising:

a first electrode that includes Nb-doped SrTiO 3 ;

a second electrode disposed on the first electrode; and

a dielectric thin film comprising SrMnO 3 disposed between the first electrode and the second electrode, and having a variable dielectric constant depending on a voltage applied between the first electrode and the second electrode,

wherein a lattice constant of the first electrode is greater than an intrinsic lattice constant of the dielectric thin film,

wherein the variable dielectric constant includes at least three dielectric constants, and

wherein the dielectric thin film is epitaxially grown on the first electrode and receives a tensile force from the first electrode so that the dielectric thin film, as epitaxially grown on the first electrode, has a lattice constant which is extended as compared with the intrinsic lattice constant of the dielectric thin film.

2. The memcapacitor of claim 1 , wherein the dielectric thin film is provided on a (001) plane of the Nb-doped SrTiO 3 .

3. A dielectric thin film, wherein

the dielectric thin film comprising a dielectric material that is epitaxially grown on an electrode, the dielectric thin film receiving a tensile force from the electrode, such that the epitaxially grown dielectric thin film has an extended lattice constant as compared with an intrinsic lattice constant of the dielectric material,

the dielectric thin film includes a passivation element that reduces a dielectric loss in the dielectric material that is caused by the extended lattice constant, and

the dielectric thin film has a variable dielectric constant due to an externally-applied electric field, the variable dielectric constant including at least three dielectric constants.

4. The dielectric thin film of claim 3 , wherein the passivation element passivates a vacancy created due to the extended lattice constant.

5. The dielectric thin film of claim 3 , wherein

a vacancy created due to the extended lattice constant includes an oxygen vacancy, and

the passivation element includes oxygen.

6. The dielectric thin film of claim 3 , wherein a (002) peak is observed when a value of 2θ exceeds 48° through XRD measurement.

7. A memcapacitor comprising:

a first electrode that includes Nb-doped SrTiO 3 ;

a dielectric thin film comprising SrMnO 3 that is epitaxially grown on the first electrode, the dielectric thin film receiving a tensile force from the first electrode, such that the epitaxially grown dielectric thin film has an extended lattice constant as compared to an intrinsic lattice constant of SrMnO 3 ; and

a second electrode disposed on the dielectric thin film,

wherein the dielectric thin film includes a passivation element that reduces a dielectric loss in SrMnO 3 that is caused by the extended lattice constant, and

wherein the dielectric thin film has a variable dielectric constant caused by an externally-applied electric field.

8. The memcapacitor of claim 7 , wherein the dielectric thin film has:

a first dielectric constant when the externally-applied electric field is less than −5 V;

a second dielectric constant when the externally-applied electric field is between 0 V and +5 V;

a third dielectric constant when the externally-applied electric field is greater than +5 V; and

the first, second, and third dielectric constants are all different from each other.