IP Library Granted Patent US 11,937,370
Granted Patent B2
US 11,937,370 · App. 17/463,571 · Granted Mar 19, 2024

Method for manufacturing a substrate structure with high reflectance

Inventors: Cheng-I Tu (Tainan, TW); Ying-Hsing Chen (Taichung, TW); Meng-Huan Chia (Taichung, TW); Hsin-Ching Su (Miaoli County, TW); Yi-Chun Liu (New Taipei, TW); Cheng-Chung Lai (Changhua County, TW); Yuan-Chih Lee (Taoyuan, TW)
Assignee: UNIFLEX Technology Inc.
H05K1/0274H05K1/115H05K3/28H05K3/46H05K3/4605H01L33/60H01L33/62H01L2933/0058H01L2933/0066H05K1/0313H05K3/4602H05K2201/0108H05K2201/0129H05K2201/0154H05K2201/10106H05K2201/2054
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Quick Facts
Patent No.
US 11,937,370
App. No.
17/463,571
Granted
Mar 19, 2024
Kind
B2
Abstract

A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Claims (12)

1. A method for manufacturing a substrate structure with high reflectance, comprising:

providing a base material;

forming a first patterned circuit layer and a second patterned circuit layer on a first surface and a second surface of the base material;

providing a first insulation layer and a metal reflection layer on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer; and

forming a first ink layer on the first insulation layer before the metal reflection layer is formed.

2. The method for manufacturing the substrate structure with high reflectance as claimed in claim 1 , wherein the method of forming the metal reflection layer comprises sputtering, evaporation, electroless plating, electroplating, chemical displacement reaction or silver mirror reaction.

3. The method for manufacturing the substrate structure with high reflectance as claimed in claim 1 , wherein the method of forming the first ink layer comprises screen printing, jet printing, spray coating or film attaching.

4. The method for manufacturing the substrate structure with high reflectance as claimed in claim 1 , further comprising:

forming a second insulation layer on the second patterned circuit layer.

5. The method for manufacturing the substrate structure with high reflectance as claimed in claim 4 , further comprising:

forming a second ink layer on the second insulation layer.

6. The method for manufacturing the substrate structure with high reflectance as claimed in claim 5 , wherein the method of forming the second ink layer comprises screen printing, jet printing, spray coating or film attaching.

Priority Claims (1)
TW 108105862 · Feb 21, 2019 · national
Continuity (4)
Division 16894883 · Jun 8, 2020
Division 16387540 · Apr 18, 2019
Provisional Application 62784769 · Dec 25, 2018
Related Publication 20210400805A1 · Dec 23, 2021