Thermal management of three-dimensional integrated circuits
A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.
1. A 3D integrated circuit device, comprising:
a substrate;
an electronic device configured above the substrate;
a heat spreader located proximate to the electronic device, the heat spreader comprising a plurality of inserts arranged in a ring configuration, the plurality of inserts having a geometry that is ring shaped and blade shaped and subject to at least one level of pairing; and
a heat sink located above and adjacent to the heat spreader.
2. The 3D integrated circuit device of claim 1 wherein the heat sink comprises a coolant entrance and at least one coolant exit, wherein a coolant enters the heat sink through the coolant entrance and exits the heat sink through the at least one coolant exit.
3. The 3D integrated circuit device of claim 1 wherein the electronic device comprises at least one device layer whose cooling is attenuated by the heat sink and the heat spreader.
4. The 3D integrated circuit device of claim 3 wherein the at least one device layer comprises at least one electronic subsystem.
5. The 3D integrated circuit device of claim 4 wherein the at least one electronic subsystem comprises a processor.
6. The 3D integrated circuit device of claim 4 wherein the at least one electronic subsystem comprises a memory.
7. The 3D integrated circuit device of claim 4 wherein the at least one electronic subsystem comprises a sensor.
8. The 3D integrated circuit device of claim 1 wherein each insert among the plurality of inserts of the heat spreader comprises a high conductivity insert (HCI) and are distributed radially within the ring configuration.
9. The 3D integrated circuit device of claim 8 wherein the HCI comprises Boron Arsenide.
10. The 3D integrated circuit device of claim 1 wherein the substrate comprises an external surface that is adiabatic.
11. The 3D integrated circuit device of claim 1 wherein the ring configuration comprises a double layer ring configuration.
12. A heat spreader apparatus for use with a 3D integrated circuit device, comprising:
a heat spreader associated with an electronic device, the heat spreader comprising a plurality of inserts in a ring configuration, the plurality of inserts having a geometry that is ring and blade shaped and subject to at least one level of pairing.