Subtractive etch resolution implementing a functional thin metal resist
Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a substrate and a conductive feature over the substrate. In an embodiment, a metallic mask is positioned over the conductive feature. In an embodiment, the metallic mask extends beyond a first edge of the conductive feature and a second edge of the conductive feature.
1. An electronic package, comprising:
a substrate, the substrate comprising a dielectric layer;
a conductive feature over the substrate, the conductive feature having a first width proximate to a top portion of the conductive feature, a second width proximate to a middle portion of the conductive feature, and a third width proximate to a bottom portion of the conductive feature, the bottom portion of the conductive feature directly on the dielectric layer of the substrate, wherein the second width is smaller than the first width, and the second width is smaller than the third width; and
a metallic mask over the conductive feature, wherein the metallic mask extends beyond a first edge of the conductive feature and a second edge of the conductive feature, and wherein the metallic mask has a lateral width greater than a maximum lateral width of the conductive feature.
2. The electronic package of claim 1 , wherein the metallic mask extends beyond the first edge of the conductive feature by a first distance, and the metallic mask extends beyond the second edge of the conductive feature by a second distance, wherein the first distance is substantially equal to the second distance.
3. The electronic package of claim 2 , wherein the first distance is 1 micron or less.
4. The electronic package of claim 1 , wherein sidewall surfaces of the conductive feature are non-vertical.
5. The electronic package of claim 4 , wherein the sidewall surfaces provide an hour-glass shaped cross-section to the conductive feature.
6. The electronic package of claim 1 , wherein a thickness of the metallic mask is approximately 5 microns or less.
7. The electronic package of claim 1 , wherein sidewall surfaces of the metallic mask are non-vertical.
8. The electronic package of claim 1 , further comprising:
a barrier layer between the conductive feature and the metallic mask.
9. The electronic package of claim 8 , wherein sidewalls of the barrier layer are substantially coplanar with sidewalls of the metallic mask.
10. The electronic package of claim 8 , wherein the barrier layer comprises one or more of tin, gold, and a conductive polymer.
11. The electronic package of claim 1 , wherein the metallic mask comprises one or more of nickel, lead, and tin.
12. The electronic package of claim 1 , wherein the conductive feature is a trace.
13. The electronic package of claim 1 , wherein an etch resistance of the metallic mask in an alkaline chemistry is greater than an etch resistance of the conductive feature in the alkaline chemistry.
14. The electronic package of claim 13 , wherein the metallic mask is nickel, and wherein the conductive feature is copper.
15. The electronic package of claim 1 , further comprising:
a dielectric layer over the substrate and the conductive feature, wherein the dielectric layer conforms to a top surface of the metallic mask, sidewall surfaces of the metallic mask, and a portion of a bottom surface of the metallic mask.
16. An electronic package, comprising:
a substrate, the substrate comprising a dielectric layer;
a plurality of conductive traces over the substrate, wherein sidewall surfaces of the plurality of conductive traces are non-vertical, each one of the plurality of conductive traces having a first width proximate to a top portion of the conductive trace, a second width proximate to a middle portion of the conductive trace, and a third width proximate to a bottom portion of the conductive trace, the bottom portion of the conductive trace directly on the dielectric layer of the substrate, wherein the second width is smaller than the first width, and the second width is smaller than the third width; and
a plurality of metallic masks, wherein each metallic mask is over a top surface of one of the plurality of conductive traces, and wherein each metallic mask extends a distance beyond edges of the underlying one of the plurality of conductive traces, and wherein each metallic mask has a lateral width greater than a maximum lateral width of the underlying one of the plurality of conductive traces.
17. The electronic package of claim 16 , wherein a distance between sidewalls of neighboring metallic masks is less than 40 microns.
18. The electronic package of claim 16 , wherein a ratio of a distance between sidewalls of neighboring metallic masks to a thickness of the metallic masks is 3:1 or greater.
19. The electronic package of claim 18 , wherein a thickness of the metallic mask is approximately 5 microns or less.
20. The electronic package of claim 16 , wherein the plurality of metallic masks comprise one or more of nickel, lead, and tin, and wherein the plurality of traces comprise copper.
21. The electronic package of claim 16 , further comprising:
a barrier layer between the plurality of traces and the plurality of metallic masks.
22. The electronic package of claim 16 , wherein sidewalls of the plurality of metallic masks are non-vertical.
23. An electronic system, comprising:
a die; and
an electronic package coupled to the die, wherein the electronic package comprises:
a substrate, the substrate comprising a dielectric layer;
a conductive feature over the substrate, the conductive feature having a first width proximate to a top portion of the conductive feature, a second width proximate to a middle portion of the conductive feature, and a third width proximate to a bottom portion of the conductive feature, the bottom portion of the conductive feature directly on the dielectric layer of the substrate, wherein the second width is smaller than the first width, and the second width is smaller than the third width; and
a metallic mask over the conductive feature, wherein the metallic mask extends beyond a first edge of the conductive feature and a second edge of the conductive feature, and wherein the metallic mask has a lateral width greater than a maximum lateral width of the conductive feature.
24. The electronic system of claim 23 , further comprising:
a board coupled to the electronic package.
25. The electronic system of claim 23 , wherein the metallic mask has a thickness that is approximately 5 microns or less.