Semiconductor device
Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.
1. A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:
a gate runner portion that supplies a gate potential to the transistor region; and
a well region of a first conductivity type provided below the gate runner portion;
an interlayer dielectric film provided above the semiconductor substrate;
a cathode region of a second conductivity type provided in the diode region and exposed at a lower surface side of the semiconductor substrate;
a first contact portion that includes (i) one or more inner contact portions provided in a first region of the interlayer dielectric film and extending in a first direction and (ii) one or more outer contact portions provided in a second region of the interlayer dielectric film and extending in the first direction, the first region being located above and overlapping the cathode region, and the second region being located on an outside of the one or more inner contact portions in the first direction; and
one or more second contact portions provided in the interlayer dielectric film in the transistor region and extending in the first direction,
wherein at least one end of the one or more second contact portions extends further outside in the first direction than an end of the one or more outer contact portions,
wherein the one or more inner contact portions are spaced apart from each other in a second direction perpendicular to the first direction,
wherein the one or more outer contact portions are spaced apart from each other in the second direction,
wherein the one or more outer contact portions are provided between the well region and the one or more inner contact portions in the first direction, and
wherein the one or more outer contact portions are provided between the one or more second contact portions in the second direction.
2. The semiconductor device according to claim 1 , wherein
the end of the one or more outer contact portions is spaced apart from the well region in the first direction.
3. The semiconductor device according to claim 1 , wherein
the one or more second contact portions are spaced apart from each other in a second direction perpendicular to the first direction.
4. The semiconductor device according to claim 3 , wherein
when seen from above, the at least one end of the one or more second contact portions extends in the first direction to overlap the well region.
5. The semiconductor device according to claim 3 , further comprising:
an emitter electrode provided above the interlayer dielectric film;
an anode region of the first conductivity type electrically connected to the emitter electrode in the diode region via the first contact portion;
a base region of the first conductivity type electrically connected to the emitter electrode in the transistor region via the one or more second contact portions; and
an emitter region of the second conductivity type electrically connected to the emitter electrode in the transistor region via the one or more second contact portions.
6. The semiconductor device according to claim 5 , further comprising:
a trench portion that is provided from an upper surface of the semiconductor substrate to a predetermined depth and includes a plurality of longitudinal portions extending in the first direction; and
a plurality of mesa regions provided between two longitudinal portions of the plurality of longitudinal portions, wherein
the trench portion includes a gate trench portion provided in the transistor region.
7. The semiconductor device according to claim 6 , wherein
the plurality of mesa regions include a boundary mesa region that is provided adjacent to the diode region in the second direction and does not include the emitter region, and
the trench portion includes a dummy trench portion in contact with the boundary mesa region.
8. The semiconductor device according to claim 7 , further comprising:
the diode region is located, in the second direction, between the dummy trench portion in contact with the boundary mesa region of one transistor region and the dummy trench portion in contact with the boundary mesa region of another transistor region, the one transistor region and the other transistor region adjacent to the diode region.
9. The semiconductor device according to claim 8 , wherein
the one or more second contact portions include a plurality of boundary contact portions provided adjacent to the diode region, and
positions of end of the plurality of boundary contact portions in the first direction change sequentially.
10. The semiconductor device according to claim 8 , wherein
the one or more second contact portions include a plurality of boundary contact portions provided adjacent to the diode region, and
positions of end of the plurality of boundary contact portions in the first direction change stepwise.
11. The semiconductor device according to claim 9 , wherein
as the plurality of boundary contact portions are further spaced away from the diode region in the second direction, the end of the plurality of boundary contact portions extends further outside in the first direction.
12. The semiconductor device according to claim 11 , wherein
at least one of the plurality of boundary contact portions is connected to the boundary mesa region.
13. The semiconductor device according to claim 8 , further comprising
a lifetime killer region provided at least in the diode region.
14. The semiconductor device according to claim 13 , wherein
the lifetime killer region includes a concentration distribution peak of a lifetime killer at a position closer to a lower surface of the semiconductor substrate than a bottom of the well region.
15. The semiconductor device according to claim 13 , wherein
the lifetime killer region is provided in a wider range than the cathode region.
16. The semiconductor device according to claim 6 , wherein
when seen from above, at least a part of the trench portion has a curved shape with a curvature radius equals to or larger than 1.15 μm.
17. The semiconductor device according to claim 6 , wherein
when seen from above, at least a part of the trench portion has a curved shape, and
a curvature radius of the curved shape is equal to or larger than a half of a pitch of the plurality of longitudinal portions of the gate trench portion in the second direction.
18. The semiconductor device according to claim 1 , wherein at least one of the one or more outer contact portions is contiguous to at least one of the one or more inner contact portions in the first direction.
19. A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:
a gate runner portion that supplies a gate potential to the transistor region;
a well region of a first conductivity type provided below the gate runner portion;
an interlayer dielectric film provided above the semiconductor substrate;
one or more first contact portions provided in the interlayer dielectric film in the diode region and extending in a first direction such that, when seen from above, an end of the one or more first contact portions does not overlap the well region; and
one or more second contact portions provided in the interlayer dielectric film in the transistor region and extending in the first direction such that, when seen from above, an end of the one or more second contact portions overlaps the well region.
20. A method of manufacturing a semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising a gate runner portion that supplies a gate potential to the transistor region, a well region of a first conductivity type provided below the gate runner portion, and a cathode region of a second conductivity type provided in the diode region and exposed at a lower surface side of the semiconductor substrate, the method comprising:
forming an interlayer dielectric film above the semiconductor substrate;
forming a first contact portion that includes (i) one or more inner contact portions provided in a first region of the interlayer dielectric film and extending in a first direction and (ii) one or more outer contact portions provided in a second region of the interlayer dielectric film and extending in the first direction, the first region being located above and overlapping the cathode region, and the second region being located on an outside of the one or more inner contact portions in the first direction; and
forming one or more second contact portions in the interlayer dielectric film in the transistor region and extending in the first direction such that at least one end of the one or more second contact portions extends further outside in the first direction than an end of the one or more outer contact portions,
wherein the one or more inner contact portions are spaced apart from each other in a second direction perpendicular to the first direction,
wherein the one or more outer contact portions are spaced apart from each other in the second direction,
wherein the one or more outer contact portions are provided between the well region and the one or more inner contact portions in the first direction, and
wherein the one or more outer contact portions are provided between the one or more second contact portions in the second direction.