IP Library Granted Patent US 11,950,447
Granted Patent B2
US 11,950,447 · App. 17/299,386 · Granted Apr 2, 2024

Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Inventors: Takeyoshi Watabe (Kanagawa, JP); Airi Ueda (Kanagawa, JP); Nobuharu Ohsawa (Kanagawa, JP); Satoshi Seo (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/852C09K11/06H10K50/818H10K50/828H10K50/858C09K2211/1044C09K2211/185H10K85/342H10K85/615H10K85/626H10K85/633H10K85/636H10K85/6572H10K85/6576H10K2102/3026H10K2102/351
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Quick Facts
Patent No.
US 11,950,447
App. No.
17/299,386
Granted
Apr 2, 2024
Kind
B2
Abstract

A novel light-emitting device with a microcavity structure which can improve the emission efficiency compared to the conventional one is provided. In a light-emitting device with a microcavity structure that emits light in a near-infrared range, reflectance of one or both of a first electrode (reflective electrode) and a second electrode (semi-transmissive and semi-reflective electrode) with respect to light in a near-infrared range (e.g., light with a wavelength of 850 nm) is higher than the reflectance thereof with respect to light in a visible light range (greater than or equal to 400 nm and less than 750 nm).

Claims (55)

1. A light-emitting device comprising an EL layer between a first electrode and a second electrode,

wherein the first electrode is a reflective electrode and the second electrode is a semi-transmissive and semi-reflective electrode,

wherein the EL layer emits light having an emission peak in a wavelength range from 750 nm to 1000 nm, and

wherein reflectance of one or both of the first electrode and the second electrode with respect to light with a wavelength of 850 nm is higher than the reflectance thereof with respect to light with a wavelength of 500 nm.

2. The light-emitting device according to claim 1 ,

wherein the second electrode has a thickness greater than or equal to 20 nm and less than or equal to 60 nm.

3. The light-emitting device according to claim 1 , further comprising:

an organic layer that is in contact with the second electrode and sandwiches the second electrode with the EL layer,

wherein the organic layer has a refractive index of greater than or equal to 1.7.

4. The light-emitting device according to claim 3 ,

wherein a thickness of the organic layer is greater than or equal to 80 nm and less than or equal to 160 nm.

5. The light-emitting device according to claim 1 ,

wherein at least one of the first electrode and the second electrode comprises at least one of gold (Au), silver (Ag), and copper (Cu).

6. The light-emitting device according to claim 1 ,

wherein the reflectance of the first electrode with respect to light with a wavelength of 850 nm is higher than or equal to 90%.

7. The light-emitting device according to claim 1 ,

wherein the reflectance of the second electrode with respect to light with a wavelength of 850 nm is higher than or equal to 90%.

8. A light-emitting apparatus comprising:

the light-emitting device according to claim 1 ; and

an FPC.

9. An electronic device comprising:

the light-emitting apparatus according to claim 8 ; and

at least one of a microphone, a camera, an operation button, an external connection portion, and a speaker.

10. A lighting device comprising:

the light-emitting device according to claim 1 ; and

at least one of a housing and a cover.

11. A light-emitting device comprising an EL layer between a first electrode and a second electrode,

wherein the first electrode is a reflective electrode and the second electrode is a semi-transmissive and semi-reflective electrode,

wherein the EL layer comprises a light-emitting substance having an emission peak in a wavelength range from 750 nm to 1000 nm, and

wherein a peak of emission spectrum of light emitted from the EL layer has longer wavelength than the emission peak of the light-emitting substance.

12. The light-emitting device according to claim 11 ,

wherein at least one of the first electrode and the second electrode comprises at least one of gold (Au), silver (Ag), and copper (Cu).

13. The light-emitting device according to claim 11 ,

wherein the reflectance of the first electrode with respect to light with a wavelength of 850 nm is higher than or equal to 90%.

14. The light-emitting device according to claim 11 ,

wherein the reflectance of the second electrode with respect to light with a wavelength of 850 nm is higher than or equal to 90%.

15. The light-emitting device according to claim 11 ,

wherein the light-emitting substance is a phosphorescent substance.

16. The light-emitting device according to claim 11 ,

wherein the light-emitting substance is an organometallic complex represented by General Formula (G1):

wherein:

each of R 1 to R 11 independently represents hydrogen or an alkyl group having 1 to 6 carbon atoms,

at least two of R 1 to R 4 represent an alkyl group having 1 to 6 carbon atoms,

at least two of R 5 to R 9 represent an alkyl group having 1 to 6 carbon atoms,

X represents a substituted or unsubstituted benzene ring or naphthalene ring, and

n is 2 or 3; and L represents a monoanionic ligand.

17. A light-emitting apparatus comprising:

the light-emitting device according to claim 11 ; and

an FPC.

18. An electronic device comprising:

the light-emitting apparatus according to claim 17 ; and

at least one of a microphone, a camera, an operation button, an external connection portion, and a speaker.

19. A lighting device comprising:

the light-emitting device according to claim 11 ; and

at least one of a housing and a cover.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2021
From: WATABE, TAKEYOSHI; UEDA, AIRI; OHSAWA, NOBUHARU; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 056427/0010 →
Priority Claims (1)
JP 2018-230585 · Dec 10, 2018 · national
Continuity (1)
Related Publication 20220029134A1 · Jan 27, 2022